OREGON STATE UNIVERSITY

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Found 65 results
Filters: Author is Conley, John F.  [Clear All Filters]
2003
Conley, J. F., Y. Ono, D. Tweet, G. Stecker, R. Solanki, and W. W. Zhuang, "Alternating Pulse Deposition of High-k Metal Oxide Thin Films using Hf(NO3)4 as a Metal and an Oxygen Source with Multiple in-situ Annealing", 204th Meeting of The Electrochemical Society,, 10/2003.
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki, "Atomic layer deposition of thin hafnium oxide films using a carbon free precursor", Journal of Applied Physics, vol. 93, issue 1, pp. 712-718, 01/2003.
Conley, J. F., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, "Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O", Applied Physics Letters, vol. 82, issue 20, pp. 3508-3510, 05/2003.
Kang, A. Y., P. M. Lenahan, and J. F. Conley, "Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si", Applied Physics Letters, vol. 83, issue 16, pp. 3407-3409, 10/2003.
Gao, W., J. F. Conley, and Y. Ono, "NbO Gate Electrode", 204th Meeting of The Electrochemical Society, 10/2003.
Dautrich, M., P. M. Lenahan, A. Y. Kang, and J. F. Conley, "Non-invasive nature of corona charging on thermal Si/SiO2 structures", IEEE 2003 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 7 - 9, 10/2003.
Conley, J. F., Y. Ono, and R. Solanki, "Pulsed Deposition of HfO2 using Hf(NO3)4 as an Oxidizing Agent for HfCl4", MRS Proceedings, pp. 91-96, 04/2003.
He, W., R. Solanki, J. F. Conley, and Y. Ono, "Pulsed deposition of silicate films", Journal of Applied Physics, vol. 94, issue 5, pp. 3657-3659, 09/2003.
Kang, A. Y., P. M. Lenahan, J. F. Conley, and Y. Ono, "Reliability Concerns for HfO2/Si (and ZrO2/Si) Systems: Interface and Dielectric Traps", IEEE 2003 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 24 - 27, 10/2003.
Gao, W., J. F. Conley, and Y. Ono, "Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control", MRS Proceedings, vol. 765, pp. 3-8, 01/2003.
Vandooren, A., S. Cristoloveanu, J. F. Conley, M. Mojarradi, and E. Kolawa, "A systematic investigation of the degradation mechanisms in SOI n-channel LD-MOSFETs", Solid-State Electronics, vol. 47, issue 9, pp. 1419 - 1427, 09/2003.
2002
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki, "Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor", MRS Proceedings, vol. 716, pp. 73-78, 01/2002.
Conley, J. F., Y. Ono, W. Zhuang, D. J. Tweet, W. Gao, S. K. Mohammed, and R. Solanki, "Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate", Electrochemical and Solid-State Letters, vol. 5, issue 5, pp. C57-C59, 02/2002.
Conley, J. F., Y. Ono, W. Zhuang, L. Stecker, and G. Stecker, "Electrical Properties and Reliability of HfO2 Deposited via ALD using Hf(NO3)4 Precursor", IEEE 2002 Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 108 - 112, 10/2002.

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