OREGON STATE UNIVERSITY

You are here

Biblio

Found 65 results
Filters: Author is Conley, John F.  [Clear All Filters]
2002
Kang, A. Y., P. M. Lenahan, J. F. Conley, and R. Solanki, "Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si", Applied Physics Letters, vol. 81, issue 6, pp. 1128-1130, 08/2002.
Zhuang, W., J. F. Conley, Y. Ono, D. R. Evans, and R. Solanki, "Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition", Integrated Ferroelectrics, vol. 48, no. 1, pp. 3-12, 01/2002.
Suehle, J. S., E. M. Vogel, P. Roitman, J. F. Conley, A. H. Johnston, B. Wang, J. B. Bernstein, and C. E. Weintraub, "Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation", Applied Physics Letters, vol. 80, issue 7, pp. 1282-1284, 02/2002.
Kang, A. Y., P. M. Lenahan, and J. F. Conley, "The radiation response of the high dielectric-constant hafnium oxide/silicon system", IEEE Transactions on Nuclear Science, vol. 49, issue 6, pp. 2636 - 2642, 12/2002.
Kang, A. Y., P. M. Lenahan, and J. F. Conley, "Reliability Concerns for HfO2/Si Devices: Interface and Dielectric Traps", IEEE International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 102 - 107, 10/2002.
2001
Vandooren, A., J. F. Conley, S. Cristoloveanu, M. Mojarradi, and E. Kolawa, "Degradation mechanisms in SOI n-channel LDMOSFETs", Microelectronic Engineering, vol. 59, issue 1-4, pp. 489 - 495, 11/2001.
Conley, J. F., J. S. Suehle, A. H. Johnston, B. Wang, T. Miyahara, E. M. Vogel, and J. B. Bernstein, "Heavy-ion-induced soft breakdown of thin gate oxides", IEEE Transactions on Nuclear Science, vol. 48, issue 6, pp. 1913 - 1916, 12/2001.
Wang, B., J. S. Suehle, E. M. Vogel, J. F. Conley, C. E. Weintraub, A. H. Johnston, and J. B. Bernstein, "Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation", IEEE 2001 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 16 - 19, 10/2001.
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, M. Khaiser, and R. Solanki, "Preliminary investigation of hafnium oxide deposited via atomic layer chemical vapor deposition (ALCVD)", IEEE 2001 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 11 - 15, 10/2001.
Conley, J. F., A. Vandooren, L. Reiner, S. Cristoloveanu, M. Mojarradi, and E. Kolowa, "Radiation induced degradation of SOI n-channel LDMOSFETs", 2001 IEEE International SOI Conference, Durango, CO, IEEE, pp. 125 - 126, 10/2001.

Pages