OREGON STATE UNIVERSITY

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Biblio

Found 7 results
Filters: Author is Zhuang, W.  [Clear All Filters]
2002
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki, "Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor", MRS Proceedings, vol. 716, pp. 73-78, 01/2002.
Conley, J. F., Y. Ono, W. Zhuang, D. J. Tweet, W. Gao, S. K. Mohammed, and R. Solanki, "Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate", Electrochemical and Solid-State Letters, vol. 5, issue 5, pp. C57-C59, 02/2002.
Conley, J. F., Y. Ono, W. Zhuang, L. Stecker, and G. Stecker, "Electrical Properties and Reliability of HfO2 Deposited via ALD using Hf(NO3)4 Precursor", IEEE 2002 Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 108 - 112, 10/2002.
Zhuang, W., J. F. Conley, Y. Ono, D. R. Evans, and R. Solanki, "Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition", Integrated Ferroelectrics, vol. 48, no. 1, pp. 3-12, 01/2002.
2001
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, M. Khaiser, and R. Solanki, "Preliminary investigation of hafnium oxide deposited via atomic layer chemical vapor deposition (ALCVD)", IEEE 2001 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 11 - 15, 10/2001.