OREGON STATE UNIVERSITY

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Found 142 results
Filters: Author is Wager, John F.  [Clear All Filters]
2013
Wager, J. F., and B. Yeh, "Oxide Thin-Film Transistors: Device Physics", Oxide Semiconductors, vol. 88: Elsevier, pp. 283 - 315, 2013.
2012
Cowell, W. E., C. C. Knutson, N. A. Kuhta, W. Stickle, D. A. Keszler, and J. F. Wager, "Engineering anisotropic dielectric response through amorphous laminate structures", Physica Status Solidi (a), vol. 209, issue 4, pp. 777 - 784, 04/2012.
Wager, J. F., K. Hoshino, E. S. Sundholm, R. E. Presley, R. Ravichandran, C. C. Knutson, D. A. Keszler, R. L. Hoffman, D. A. Mourey, and J. Robertson, "A framework for assessing amorphous oxide semiconductor thin-film transistor passivation", Journal of the Society for Information Display, vol. 20, issue 10, pp. 589 - 595, 10/2012.
Best paper of 2012 for the Journal of Information Display
Alimardani, N., W. E. Cowell, J. F. Wager, J. F. Conley, D. R. Evans, M. Chin, S. J. Kilpatrick, and M. Dubey, "Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, issue 1, pp. 01A113, 01/2012.
Sundholm, E. S., R. E. Presley, K. Hoshino, C. C. Knutson, R. L. Hoffman, D. A. Mourey, D. A. Keszler, and J. F. Wager, "Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer", IEEE Electron Device Letters, vol. 33, issue 6, pp. 836 - 838, 06/2012.
Lany, S., A. Zakutayev, T. Mason, J. F. Wager, K. Poeppelmeier, J. Perkins, J. Berry, D. Ginley, and A. Zunger, "Surface Origin of High Conductivities in Undoped In_{2}O_{3} Thin Films", Physical Review Letters, vol. 108, issue 1, 01/2012.
2011
Cowell, W. E., N. Alimardani, C. C. Knutson, J. F. Conley, D. A. Keszler, B. J. Gibbons, and J. F. Wager, "Advancing MIM Electronics: Amorphous Metal Electrodes", Advanced Materials, vol. 23, issue 1, pp. 74 - 78, 01/2011.
Pelatt, B. D., R. Ravichandran, J. F. Wager, and D. A. Keszler, "Atomic Solid State Energy Scale", Journal of the American Chemical Society, vol. 133, issue 42, pp. 16852 - 16860, 10/2011.
Yu, L., S. Lany, R. Kykyneshi, V. Jieratum, R. Ravichandran, B. Pelatt, E. Altschul, H. A. S. Platt, J. F. Wager, D. A. Keszler, et al., "Iron Chalcogenide Photovoltaic Absorbers", Advanced Energy Materials, vol. 1, issue 5, pp. 748 - 753, 10/2011.
Jiang, K., J. T. Anderson, K. Hoshino, D. Li, J. F. Wager, and D. A. Keszler, "Low-Energy Path to Dense HfO2 Thin Films with Aqueous Precursor", Chemistry of Materials, vol. 23, issue 4, pp. 945 - 952, 02/2011.
Wager, J. F., and J. Robertson, "Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer", Journal of Applied Physics, vol. 109, issue 9, pp. 094501, 2011.
Wager, J. F., "Oxide Thin-Film Transistors", Handbook of Visual Display Technology, vol. 1, 2011.
Wager, J. F., and R. L. Hoffman, "Thin, Fast, and Flexible: amorphous oxide semiconductors promise to makes flat-panel displays faster and sharper than today’s silicon standby", IEEE Spectrum, pp. 42-45, 51-56, 05/2011.
Waggoner, T., J. Triska, K. Hoshino, J. F. Wager, and J. F. Conley, "Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 29, issue 4, pp. 04D115, 07/2011.
2010
McFarlane, B. R., P. Kurahashi, D. P. Heineck, R. E. Presley, E. S. Sundholm, and J. F. Wager, "AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors", IEEE Electron Device Letters, vol. 31, issue 4, pp. 314 - 316, 04/2010.
Cowell, III, W. E., C. C. Knutson, J. F. Wager, and D. A. Keszler, "Amorphous Metal/Oxide Nanolaminate", ACS Applied Materials & Interfaces, vol. 2, issue 7, pp. 1811 - 1813, 07/2010.
Triska, J., J. F. Conley, R. E. Presley, and J. F. Wager, "Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 28, issue 4, pp. C5I1, 07/2010.
Hoshino, K., and J. F. Wager, "Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors", IEEE Electron Device Letters, vol. 31, issue 8, pp. 818 - 820, 08/2010.
Alimardani, N., J. F. Conley, E. W. Cowell, J. F. Wager, M. Chin, S. Kilpatrick, and M. Dubey, "Stability and bias stressing of metal/insulator/metal diodes", 2010 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe, CA, IEEE, pp. 80 - 84, 10/2010.
Wager, J. F., "Transfer-curve assessment of oxide thin-film transistors", Journal of the Society for Information Display, vol. 18, issue 10, pp. 749–752, 10/2010.
2009
Triska, J., J. F. Conley, R. Presley, and J. F. Wager, "Bias Stability of Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate Dielectrics", IEEE International Integrated Reliability Workshop (IRW), South Lake Tahoe, CA, IEEE, pp. 86 - 89, 10/2009.
Hoshino, K., D. Hong, H. Q. Chiang, and J. F. Wager, "Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors", IEEE Transactions on Electron Devices, vol. 56, issue 7, pp. 1365 - 1370, 05/2009.
Wager, J. F., "Invited Paper: Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications", SID Symposium Digest of Technical Papers, vol. 40, issue 1, pp. 181, 06/2009.
Wager, J. F., "Invited Paper: Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications", SID Symposium Digest of Technical Papers, vol. 40, issue 1, pp. 181-183, 06/2009.

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