OREGON STATE UNIVERSITY

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Biblio

Found 142 results
Filters: Author is Wager, John F.  [Clear All Filters]
1991
Wager, J. F., "Energetics of self-diffusion in GaAs", Journal of Applied Physics, vol. 69, issue 5, pp. 3022, 03/1991.
Wager, J. F., "A statistical thermodynamic derivation of the ballistic model for vacancy migration", Philosophical Magazine A, vol. 63, issue 6, pp. 1315 - 1326, 06/1991.
1990
McArthur, R. C., J. D. Davidson, J. F. Wager, R. I. Khormaei, and C. N. King, "Capacitance-voltage characteristics of alternating-current thin-film electroluminescent devices", Applied Physics Letters, vol. 56, issue 19, pp. 1889, 1990.
Kim, S. B., J. F. Wager, and D. C. Morton, "Diamond-like carbon films for electroluminescent applications", Surface and Coatings Technology, vol. 43-44, pp. 99 - 106, 12/1990.
Kim, S. B., J. F. Wager, and D. C. Morton, "Short-wavelength electroluminescence in diamond-like carbon thin films", Thin Solid Films, vol. 189, issue 1, pp. 45 - 50, 08/1990.
Dobson, T. W., L. V. A. Scalvi, and J. F. Wager, "Transient decay of persistent photoconductivity in Al0.3Ga0.7As", Journal of Applied Physics, vol. 68, issue 2, pp. 601, 07/1990.
1989
Nelson, A. J., D. K. Benson, C. E. Tracy, L. L. Kazmerski, and J. F. Wager, "Electron energy-loss spectroscopy analysis of low-temperature plasma-enhanced chemically vapor deposited a-C:H films", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 7, issue 3, pp. 1350, 1989.
Dobson, T. W., and J. F. Wager, "Enthalpy of formation of antisite defects and antistructure pairs in III-V compound semiconductors", Journal of Applied Physics, vol. 66, issue 5, pp. 1997, 09/1989.
Dobson, T. W., J. F. Wager, and J. A. Van Vechten, "Entropy of migration for atomic hopping", Physical Review B, vol. 40, issue 5, pp. 2962 - 2967, 08/1989.
Wager, J. F., and J. A. Van Vechten, "Reply to ‘‘Comment on ‘Atomic model for the EL2 defect in GaAs’’", Physical Review B, vol. 39, issue 3, pp. 1967 - 1969, 01/1989.
1988
Kim, S. B., and J. F. Wager, "Electroluminescence in diamond-like carbon films", Applied Physics Letters, vol. 53, issue 19, pp. 1880, 11/1988.
Juang, M. T., J. F. Wager, and J. A. Van Vechten, "Phosphorous Vacancy Nearest Neighbor Hopping Induced Instabilities in InP Capacitors", Journal of The Electrochemical Society, vol. 135, issue 8, pp. 2023, 1988.
Wager, J. F., and J. A. Van Vechten, "Reply to ‘‘Comment on ‘Atomic model for the EL2 defect in GaAs’’", Physical Review B, vol. 38, issue 15, pp. 10956 - 10957, 11/1988.
1987
Wager, J. F., and J. A. Van Vechten, "Atomic model for the EL0 defect in GaAs", Journal of Applied Physics, vol. 62, issue 10, pp. 4192, 1987.
Wager, J. F., and J. A. Van Vechten, "Atomic model for the EL2 defect in GaAs", Physical Review B, vol. 35, issue 5, pp. 2330 - 2339, 02/1987.
Wager, J. F., and A. J. McCamant, "GaAs MESFET interface considerations", IEEE Transactions on Electron Devices, vol. 34, issue 5, pp. 1001 - 1007, 05/1987.
Wager, J. F., and S. J. T. Owen, "InP MISFET Technology", Journal of The Electrochemical Society, vol. 134, issue 1, pp. 160, 1987.
1985
Van Vechten, J. A., and J. F. Wager, "Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy", Physical Review B, vol. 32, issue 8, pp. 5259 - 5264, 10/1985.
Wager, J. F., and J. A. Van Vechten, "Atomic model for the M center in InP", Physical Review B, vol. 32, issue 8, pp. 5251 - 5258, 10/1985.
Krivanek, O. L., Z. Liliental, J. F. Wager, R. G. Gan, S. M. Goodnick, and C. W. Wilmsen, "A combined high-resolution electron microscopy, x-ray photoemission spectroscopy, and electrical properties study of the InP–SiO2 interface", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 3, issue 4, pp. 1081, 1985.
Van Vechten, J. A., and J. F. Wager, "Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors", Journal of Applied Physics, vol. 57, issue 6, pp. 1956, 1985.
Liliental, Z., O. L. Krivanek, J. F. Wager, and S. M. Goodnick, "Structure of the InP/SiO₂ interface", Applied Physics Letters, vol. 46, issue 9, pp. 889, 1985.
Wager, J. F., and D. R. Rhiger, "Surface characterization of Hg₀.₇Cd₀.₃Te native oxides", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 3, issue 1, pp. 212, 1985.
1984
Geib, K. M., S. M. Goodnick, D. Y. Lin, R. G. Gann, C. W. Wilmsen, and J. F. Wager, "Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 2, issue 3, pp. 516, 1984.
Wager, J. F., M. D. Clark, and R. A. Jullens, "SiO2/InP interfaces with reduced interface state density", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 2, issue 3, pp. 584, 1984.

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