OREGON STATE UNIVERSITY

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Found 7 results
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2006
Chiang, H. Q., D. Hong, C. M. Hung, R. E. Presley, J. F. Wager, C. - H. Park, D. A. Keszler, and G. S. Herman, "Thin-film transistors with amorphous indium gallium oxide channel layers", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, issue 6, pp. 2702, 2006.
Hong, D., H. Q. Chiang, and J. F. Wager, "Zinc tin oxide thin-film transistors via reactive sputtering using a metal target", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, issue 5, pp. L23, 2006.
2005
Chiang, H. Q., J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer", Applied Physics Letters, vol. 86, issue 1, pp. 013503, 2005.
Hong, D., and J. F. Wager, "Passivation of zinc–tin–oxide thin-film transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, issue 6, pp. L25, 2005.
DeHuff, N. L., E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. - H. Park, and D. A. Keszler, "Transparent thin-film transistors with zinc indium oxide channel layer", Journal of Applied Physics, vol. 97, issue 6, pp. 064505, 2005.
1983
Ireland, P. J., O. Jamjoum, L. L. Kazmerski, R. K. Ahrenkiel, P. E. Russell, W. Stanchina, and J. F. Wager, "Surface and interface analysis of GaAs–oxyfluorides", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 1, issue 2, pp. 653, 1983.
1979
Birey, H., S‐J. Pak, J. R. Sites, and J. F. Wager, "Ion-beam-sputtered AlOxNy encapsulating films", Journal of Vacuum Science and Technology, vol. 16, issue 6, pp. 2086, 1979.