OREGON STATE UNIVERSITY

You are here

Biblio

Found 19 results
Filters: Keyword is zinc compounds  [Clear All Filters]
2011
Murali, S., S. Prasertpalichat, C. C. Huang, D. Cann, R. Yimnirun, and J. F. Conley, "Conductivity Measurement of ZnO Nanowires Using the Powder-Solution-Composite Technique", Journal of The Electrochemical Society, vol. 158, issue 10, pp. G211-G216, 07/2011.
Waggoner, T., J. Triska, K. Hoshino, J. F. Wager, and J. F. Conley, "Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 29, issue 4, pp. 04D115, 07/2011.
2010
Triska, J., J. F. Conley, R. E. Presley, and J. F. Wager, "Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 28, issue 4, pp. C5I1, 07/2010.
Hoshino, K., and J. F. Wager, "Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors", IEEE Electron Device Letters, vol. 31, issue 8, pp. 818 - 820, 08/2010.
2009
Hoshino, K., D. Hong, H. Q. Chiang, and J. F. Wager, "Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors", IEEE Transactions on Electron Devices, vol. 56, issue 7, pp. 1365 - 1370, 05/2009.
2006
Hong, D., H. Q. Chiang, and J. F. Wager, "Zinc tin oxide thin-film transistors via reactive sputtering using a metal target", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, issue 5, pp. L23, 2006.
2005
Conley, J. F., L. Stecker, and Y. Ono, "Directed Integration of ZnO Nanobridge Devices on a Si Substrate", Applied Physics Letters, vol. 87, issue 22, pp. 223114, 11/2005.
Munasinghe, C., J. Heikenfeld, R. Dorey, R. Whatmore, J. P. Bender, J. F. Wager, and A. J. Steckl, "High Brightness ZnS and GaN Electroluminescent Devices Using PZT Thick Dielectric Layers", IEEE Transactions on Electron Devices, vol. 52, issue 2, pp. 194 - 203, 02/2005.
Chiang, H. Q., J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, "High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer", Applied Physics Letters, vol. 86, issue 1, pp. 013503, 2005.
Hong, D., and J. F. Wager, "Passivation of zinc–tin–oxide thin-film transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, issue 6, pp. L25, 2005.
DeHuff, N. L., E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. - H. Park, and D. A. Keszler, "Transparent thin-film transistors with zinc indium oxide channel layer", Journal of Applied Physics, vol. 97, issue 6, pp. 064505, 2005.
2003
Hoffman, R. L., B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors", Applied Physics Letters, vol. 82, issue 5, pp. 733, 2003.
2000
Bender, J. P., and J. F. Wager, "Alternating-current thin-film electroluminescent device modeling via SPICE Fowler-Nordheim diode", IEEE Transactions on Electron Devices, vol. 47, issue 5, pp. 1113 - 1115, 05/2000.