OREGON STATE UNIVERSITY

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Biblio

Found 19 results
Filters: Author is Ono, Y.  [Clear All Filters]
2006
Green, J. M., T. Gutu, L. Dong, J. Jiao, J. F. Conley, and Y. Ono, "Electron Microscopy Characterization of Al2O3 and ZnO Coated Carbon Nanotubes", Microscopy and Microanalysis, vol. 12, issue S02, pp. 676-677, 08/2006.
Goncher, G., R. Solanki, J. R. Carruthers, J. F. Conley, and Y. Ono, "p-n junctions in silicon nanowires", Journal of Electronic Materials, vol. 35, issue 7, pp. 1509 - 1512, 07/2006.
2003
Conley, J. F., Y. Ono, D. Tweet, G. Stecker, R. Solanki, and W. W. Zhuang, "Alternating Pulse Deposition of High-k Metal Oxide Thin Films using Hf(NO3)4 as a Metal and an Oxygen Source with Multiple in-situ Annealing", 204th Meeting of The Electrochemical Society,, 10/2003.
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki, "Atomic layer deposition of thin hafnium oxide films using a carbon free precursor", Journal of Applied Physics, vol. 93, issue 1, pp. 712-718, 01/2003.
Conley, J. F., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, "Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O", Applied Physics Letters, vol. 82, issue 20, pp. 3508-3510, 05/2003.
Gao, W., J. F. Conley, and Y. Ono, "NbO Gate Electrode", 204th Meeting of The Electrochemical Society, 10/2003.
Conley, J. F., Y. Ono, and R. Solanki, "Pulsed Deposition of HfO2 using Hf(NO3)4 as an Oxidizing Agent for HfCl4", MRS Proceedings, pp. 91-96, 04/2003.
He, W., R. Solanki, J. F. Conley, and Y. Ono, "Pulsed deposition of silicate films", Journal of Applied Physics, vol. 94, issue 5, pp. 3657-3659, 09/2003.
2002
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki, "Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor", MRS Proceedings, vol. 716, pp. 73-78, 01/2002.
Conley, J. F., Y. Ono, W. Zhuang, D. J. Tweet, W. Gao, S. K. Mohammed, and R. Solanki, "Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate", Electrochemical and Solid-State Letters, vol. 5, issue 5, pp. C57-C59, 02/2002.
Conley, J. F., Y. Ono, W. Zhuang, L. Stecker, and G. Stecker, "Electrical Properties and Reliability of HfO2 Deposited via ALD using Hf(NO3)4 Precursor", IEEE 2002 Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 108 - 112, 10/2002.
Zhuang, W., J. F. Conley, Y. Ono, D. R. Evans, and R. Solanki, "Hafnium Nitrate Precursor Synthesis and HfO2 Thin Film Deposition", Integrated Ferroelectrics, vol. 48, no. 1, pp. 3-12, 01/2002.
2001
Conley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, M. Khaiser, and R. Solanki, "Preliminary investigation of hafnium oxide deposited via atomic layer chemical vapor deposition (ALCVD)", IEEE 2001 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 11 - 15, 10/2001.