Online Publications and Theses

Books and Book Chapters

  • J. F. Wager and C. W. Wilmsen, "The Deposited Insulator/III-V Semiconductor Interface," a chapter in Physics and Chemistry of III-V Compound Semiconductor Interfaces, Plenum, C. W. Wilmsen, Editor (1985).
  • Atomic and Molecular Processing of Electronic and Ceramic Materials, Proceedings of the Conference held August 30-September 2, 1987, University of Washington, Seattle, Washington, MRS, I. A. Aksay, G. L. McVay, T. G. Stoebe, and J. F. Wager, Editors (1987).
  • J. F. Wager and P. D. Keir, "Electrical Characterization of Thin-Film Electroluminescent Devices," Annual Review of Materials Science 27, 228 (1997).
  • J. C. Hitt, J. P. Bender, and, J. F. Wager, "Thin-Film Electroluminescent Device Physics Modeling," CRC Reviews in Solid State and Materials Sciences 25, 29 (2000).
  • B. A. Baukol, P. D. Keir, B. A. Cleary, C. A. Nevers, T. K. Plant, and J. F. Wager, "Electro-Optic Characterization of Thin-Film Electroluminescent Devices," Handbook of Luminescence and Display Materials and Devices, edited by H. S. Nalwa and L. S. Rohwer, American Scientific Publishers, 385-412 (2003).
  • J. F. Wager, D. A. Keszler, and R. E. Presley, "Transparent Electronics," Springer, 2008.
  • D. Hong, G, Yerubandi, H. Q. Chiang, M. Spiegelberg, and J. F. Wager, "Electrical Modeling of Thin-Film Transistors," Critical Reviews in Solid State and Materials Sciences 33, 101-132 (2008).
  • J. F. Wager, "Oxide Thin-Film Transistors," Handbook of Visual Display Technology, Volume 1, J. Chen, W. Cranton, and G. Raupp (Eds) (2010)

Technical Journals

    1979

  • J. F. Wager and C. W. Wilmsen, "Auger Analysis of Ultrathin SiO2 Layers on Silicon," Journal of Applied Physics 50, 874 (1979).
  • J. Shewchun, J. DuBow, C. W. Wilmsen, R. Singh, D. Burk, and J. F. Wager, "Operation of the Semiconductor-Insulator-Semiconductor Solar Cell: Experiment," Journal of Applied Physics, 50, 2832 (1979).
  • J. F. Wager and C. W. Wilmsen, "Detection of SiO2 at the Indium Tin Oxide/Si Solar Cell Interface," Journal of Applied Physics, 50, 4172 (1979).
  • C. W. Wilmsen, R. W. Kee, J. F. Wager, J. Stannard, and L. Messick, "Deposited Insulator Layer/GaAs and InP Interface Formation," Thin Solid Films, 64, 49 (1979).
  • H. Birey, S. J. Pak, J. R. Sites, and J. F. Wager, "Ion Beam Sputtered AlOxNy Encapsulating Films," J. Vac. Sci. Technol., 16, 2086, (1979).
  • 1980

  • S. M. Goodnick, J. F. Wager, and C. W. Wilmsen, "Thermal Degradation of Indium-Tin-Oxide/p-Silicon Solar Cells," J. Appl. Phys., 51, 527 (1980).
  • J. F. Wager and C. W. Wilmsen, "Thermal Oxidation of InP," J. Appl. Phys., 51, 812 (1980).
  • J. F. Wager and C. W. Wilmsen, "Si02/InP Interface Formation: Thermodynamic Consid-erations," J. Vac. Sci. Technol., 17, 800 (1980).
  • 1981

  • J. F. Wager, D. L. Ellsworth, S. M. Goodnick, and C. W. Wilmsen, "Composition and Thermal Stability of Thin Native Oxides on InP," J. Vac. Sci. Technol., 19, 513 (1981).
  • 1982

  • J. F. Wager and C. W. Wilmsen, "The Plasma-Enhanced CVD SiO2/InP Interface," J. Vac. Sci. Technol., 53, 5789 (1982).
  • J. F. Wager, W. H. Makky, C. W. Wilmsen, and L. G. Meiners, "Oxidation of InP in a Plasma-Enhanced Chemical Vapor Deposition Reactor," Thin Solid Films, 95, 343 (1982).
  • 1983

  • J. F. Wager, C. W. Wilmsen, and L. L. Kazmerski, "Estimation of the Bandgap of InPO4," Appl. Phys. Lett., 42, 589 (1983).
  • J. F. Wager, O. Jamjoum, and L. L. Kazmerski, "The CdS/CuInSe2 Solar Cell Interface: Thermodynamic Considerations," Solar Cells, 9, 159 (1983).
  • J. F. Wager, K. M. Geib, C. W. Wilmsen, and L. L. Kazmerski, "Native Oxide Formation and Electrical Instabilities at the Insulator/InP Interface," J. Vac. Sci. Technol., B1, 778 (1983).
  • C. W. Wilmsen, J. F. Wager, K. M. Geib, T. Hwang, and M. Fathipour, "Traps at the Deposited Insulator-InP Interface: A Discussion of a Possible Cause," Thin Solid Films, 103, 47 (1983).
  • L. L. Kazmerski, I. Jamjoum, J. F. Wager, P. J. Ireland, and K. J. Bachmann, "Summary Abstract: Oxidation of CuInSe2," J. Vac. Sci. Technol., A1, 668 (1983).
  • P. J. Ireland, O. Jamjoum, L. L. Kazmerski, R. K. Ahrenkiel, P. E. Russell, W. Stanchina, and J. F. Wager, "Surface and Interface Analysis of GaAs-oxyfluorides," J. Vac. Sci. Technol., A1, 653 (1983).
  • 1984

  • J. F. Wager, M. D. Clark, and R. A. Jullens, "Si02/InP Interfaces with Reduced Interface State Density," J. Vac. Sci. Technol., B2, 584 (1984).
  • K. M. Geib, S. M. Goodnick, D. Y. Lin, R. G. Gann, C. W. Wilmsen, and J. F. Wager, "Influence of Interfacial Structure of the Electronic Properties of Si02/InP," J. Vac. Sci. Technol., B2, 516 (1984).
  • 1985

  • J. F. Wager and D. R. Rhiger, "Surface Characterization of HgCdTe Native Oxides," J. Vac. Sci. Technol., A3, 212 (1985).
  • J. A. Van Vechten and J. F. Wager, "Consequences of Anion Vacancy Nearest Neighbor Hopping in III-V Compound Semiconductors; Drift in InP MISFET's," J. Appl. Phys., 57, 1956 (1985).
  • Z. Liliental, O. Krivanek, J. F. Wager, and S. M. Goodnick, "The Structure of the InP/SiO2 Interface," Appl. Phys. Lett., 46, 889 (1985).
  • O. Krivanek, Z. Liliental, J. F. Wager, R. G. Gann, S. M. Goodnick, and C. W. Wilmsen, "A Combined HREM, XPS, and Electrical Properties Study of the InP-SiO2 Interface," J. Vac. Sci. Technol., B3, 1081 (1985).
  • J. F. Wager and J. A. Van Vechten, "An Atomic Model for the M Center in InP," Phys. Rev., B32, 5251 (1985).
  • J. A. Van Vechten and J. F. Wager, "Asymmetry of Anion and Cation Vacancy Migration Enthalpies in III-V Semiconductors; Role of Kinetic Energy," Phys. Rev., B32, 5259 (1985).
  • 1986

  • B. Rastegar and J. F. Wager, "Surface Recombination Velocity and Bulk Lifetime in GaAs and InP," Semicond. Sci. Technol., 1, 207 (1986).
  • 1987

  • J. F. Wager, S. J. T. Owen, and S. J. Prasad, "InP MISFET Technology," J. Electrochem. Soc., 134, 160 (1987).
  • J. F. Wager and J. A. Van Vechten, "Atomic Model for EL2 in GaAs," Phys. Rev., B35, 2330 (1987).
  • J. F. Wager and A. J. McCamant, "GaAs MESFET Interface Considerations," IEEE Trans. Electron Devices, ED-34, 1001 (1987).
  • J. F. Wager and J. A. Van Vechten, "Atomic Model for the ELO Defect in GaAs," J. Appl. Phys., 62, 4192 (1987).
  • M. T. Juang, J. F. Wager, and J. A. Van Vechten, "Phosphorous Vacancy Nearest-Neighbor Hopping Induced Instabilities in InP Capacitors," J. Electrochem. Soc., 135, 2019 (1987).
  • M. T. Juang, J. F. Wager, and J. A. Van Vechten, "Phosphorous Vacancy Nearest-Neighbor Hopping Induced Instabilities in InP Capacitors, Part II: Computer Simulation," J. Electrochem. Soc., 135, 2023 (1987).
  • 1988

  • J. F. Wager and J. A. Van Vechten, "Reply to Comment on 'Atomic Model for the EL2 Defect in GaAs,'" Phys. Rev., B38, 10956 (1988).
  • S. B. Kim and J. F. Wager, "Electroluminescence in Diamond-Like Carbon Films," Appl. Phys. Lett., 53, 1880 (1988).
  • 1989

  • T. W. Dobson, J. F. Wager, and J. A. Van Vechten, "Entropy of Migration for Atomic Hopping," Phys. Rev., B40, 2962 (1989).
  • J. F. Wager and J. A. Van Vechten, "Reply to Comment on 'Atomic Model for the EL2 Defect in GaAs,'" Phys. Rev., B39, 1967 (1989).
  • A. J. Nelson, D. K. Benson, C. E. Tracy, L. L. Kazmerski, and J. F. Wager, "Electron Energy-Loss Spectroscopy Analysis of Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films," J. Vac. Sci. Technol., A7, 1350 (1989).
  • T. W. Dobson and J. F. Wager, "Enthalpy of Formation of Antisite Defects and Antistructure Pairs in III-V Compound Semiconductors," J. Appl. Phys., 66, 1997 (1989).
  • 1990

  • T. W. Dobson, L. V. A. Scalvi, and J. F. Wager, "Transient Decay of Persistent Photoconductivity in Al0.3Ga0.7As," J. Appl. Phys., 68, 601 (1990).
  • R. C. McArthur, J. D. Davidson, J. F. Wager, I. Khormaei, and C.N. King, "Capacitance-Voltage Characteristics of AC Thin Film Electroluminescent Devices," Appl. Phys. Lett., 56, 1889 (1990).
  • S. B. Kim, J. F. Wager, and D. C. Morton, "Short Wavelength Electroluminescence in Diamond-Like Carbon Thin Films," Thin Solid Films, 189, 45 (1990).
  • S. B. Kim, J. F. Wager, and D. C. Morton, "Diamond-Like Carbon for Electroluminescent Applications," Surface and Coatings Technology, 43/44, 99 (1990).
  • 1991

  • J. F. Wager, "A Statistical Thermodynamic Derivation of the Ballistic Model for Vacancy Migration," Phil. Mag. A, 63, 1315 (1991).
  • J. F. Wager, "Energetics of Self-Diffusion in GaAs," J. Appl. Phys., 69, 3022 (1991).
  • 1992

  • J. D. Davidson, J. F. Wager, I. Khormaei, C. N. King, and R. Williams, "Electrical Characterization and Modeling of Alternating-Current Thin-Film Electroluminescent Devices," IEEE Trans. Electron Devices, ED-39, 1122 (1992).
  • J. D. Davidson, J. F. Wager, and S. Kobayashi, "Aging Studies of ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 71, 4040 (1992).
  • 1993

  • J. F. Wager, "Thermodynamics and Kinetics of Vacancy Self-Compensation in Wide Band Gap Semiconductors," Phil. Mag. A, 67, 897 (1993).
  • A. A. Douglas, J. F. Wager, D. C. Morton, J.B. Koh, and C.P. Hogh, "Evidence for Space Charge in Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 73, 293 (1993).
  • A. Abu-Dayah, S. Kobayashi, and J. F. Wager, "Internal Charge-Phosphor Field Characteristics of Alternating-Current Thin-Film Electroluminescent Devices," Appl. Phys. Lett., 62, 744 (1993).
  • K. Bhattacharyya, S. M. Goodnick, and J. F. Wager, "Monte Carlo Simulation of Electron Transport in Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 73, 3390 (1993).
  • A. A. Douglas, J. F. Wager, D. C. Morton, J. B. Koh, and C. P. Hogh, "Hot Electron Luminescence in ZnS Alternating-Current Thin-Film Electroluminescent Devices," Appl. Phys. Lett., 63, 231 (1993).
  • A. Abu-Dayah, J. F. Wager, and S. Kobayashi, "Electrical Characterization of Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices Subject to Various Waveforms," J. Appl. Phys., 74, 5575 (1993).
  • 1994

  • A. Abu-Dayah and J. F. Wager, "Aging Studies of Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 75, 3593 (1994).
  • S. Lim, J. H. Ryu, J. F. Wager, and T. K. Plant, "Rugate Filters Grown by Plasma-Enhanced Chemical Vapor Deposition," Thin Solid Films, 245, 141 (1994).
  • S. Lim, J. H. Ryu, J. F. Wager, and L. M. Casas, "Inhomogeneous Dielectrics Grown by Plasma-Enhanced Chemical Vapor Deposition," Thin Solid Films, 236, 64, 1994.
  • J. H. Ryu, S. Lim, and J. F. Wager, "Alternating-Current Thin-Film Electroluminescent Devices with Multiple Dielectric Layers," Thin Solid Films, 248, 63, 1994.
  • 1995

  • W. M. Ang, S. Pennathur, L. Pham, J. F. Wager, S. M. Goodnick, and A. A. Douglas, "Evidence for Band-to-Band Impact Ionization in Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 77, 2719 (1995).
  • K. Streicher, T. K. Plant, and J. F. Wager, "Hot Electron Impact Excitation of ZnS:Tb Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 78, 2101 (1995).
  • P. D. Keir, W.M. Ang, and J.F. Wager, "Modeling Space Charge in Alternating-Current Thin-Film Electroluminescent Devices using a Single Sheet Charge Model," J. Appl. Phys., 78, 4668 (1995).
  • S. Shih, P. D. Keir, and J. F. Wager, J. Viljanen "Space Charge Generation in Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices with Varying Phosphor Layer Thickness," J. Appl. Phys., 78, 5775 (1995).
  • 1996

  • S. Lim, S. Shih, and J. F. Wager, "Design and Fabrication of a Double Bandstop Rugate Filter Grown by Plasma-Enhanced Chemical Vapor Deposition," Thin Solid Films, 277, 144 (1996).
  • S. Shih, P. D. Keir, J. Hitt, and J. F. Wager, "On the Nature of Offset of the Charge-Voltage or Internal Charge-Phosphor Field Characteristics of Alternating-Current Thin-Film Electroluminescent Devices," Appl. Phys. Lett., 69, 1921 (1996).
  • P. D. Keir, H. Le, R. L. Thuemler, J. Hitt, and J. F. Wager, "Relaxation Charge Anomalies in the Charge-Voltage Characteristics of Alternating-Current Thin-Film Electroluminescent Devices," Appl. Phys. Lett., 69, 2421 (1996).
  • M. Reigrotzki, R. Redmer, I. Lee, S. S. Pennathur, J. F. Wager, S. M. Goodnick, P. Vogl, H. Eckstein, and W. Schattke, "Impact Ionization Rate and High Field Transport in ZnS with Nonlocal Band Structure," J. Appl. Phys., 80, 5054 (1996).
  • K. Lite, R. L. Thuemler, T. K. Plant, J. F. Wager, D. C. Morton, S. S. Sun, and R. H. Mauch, "Vacuum Ultraviolet Reflectivity Measurements of Thin-Film Electroluminescent Phosphors," Appl. Phys. Lett., 69, 3525 (1996).
  • 1997

  • I. Lee, S. Pennathur, S.M. Goodnick and J.F. Wager, "Band Structure and High-Field Transport of a ZnS Phosphor in AC Thin-Film Electroluminescent Devices," J. Korean Phys. Soc. 31, 517 (1997).
  • R. Myers and J. F. Wager, "Transferred Charge Analysis of Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 81, 506 (1997).
  • 1998

  • J. C. Hitt, J. F. Wager, and S. S. Sun, "Static Space Charge in Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 83, 1141 (1998).
  • M. Dur, S. M. Goodnick, S. Pennathur, J. F. Wager, M. Reigrotzki, and R. Redmer, "High-Field Transport and Electroluminescence in ZnS Phosphor Layers," J. Appl. Phys., 83, 3176 (1998).
  • J. F. Wager, Book Review, "The Mathematica Handbook," Materials Research Bulletin, 33, 1726 (1998).
  • 1999

  • P. D. Keir, J. F. Wager, B. L. Clark, D. Li, and D. A. Keszler, "Alkali Metal Coactivators in SrS:Cu,F Thin-Film Electroluminescent Devices," Appl. Phys. Lett., 75, 1398 (1999).
  • P. D. Keir, C. Maddix, B. A. Baukol, J. F. Wager, B. L. Clark, and D. A. Keszler, "Lanthanide Doping in ZnS and SrS Thin-Film Electroluminescent Devices," J. Appl. Phys., 86, 6810 (1999).
  • A. S. Grudzinsky, P. D. Keir, and J. F. Wager, "Simulations of SrS:Ce ACTFEL Devices Using a Two-Sheet Space Charge Model," Display and Imaging, 8, 61 (1999).
  • 2000

  • B. A. Baukol, J. C. Hitt, P. D. Keir, and J. F. Wager, "Electroluminescence Thermal Quenching in Thin-Film Electroluminescent Devices," Appl. Phys. Lett., 76, 185 (2000).
  • D. Li, B. L. Clark, D. A. Keszler, P. D. Keir and J. F. Wager, "Color Control in Sulfide Phosphors; Tuning Up the Light for Electroluminescent Displays," Chem. Mater., 12, 268 (2000).
  • J. P. Bender and J. F. Wager, "Alternating-Current Thin-Film Electroluminescent Device Modeling via SPICE Fowler-Nordheim Diode," IEEE Trans. Electron Devices, ED-47, 1113-1115 (2000).
  • B. A. Cleary, J.C. Hitt, P. D. Keir, T.K. Plant, J. F. Wager, and S. S. Sun, "Photo-Induced Charge and Luminescence Measurements of Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. SID Suppl., 1, 51 (2000).
  • S. S. Lee, S. Lim, S. Sun, and J. F. Wager, "New CaSiN2 Phosphor for Thin-Film Electroluminescent Device Application," J. SID Suppl., 1, 51 (2000).
  • 2001

  • B. J. Norris and J. F. Wager, "Transient Brightness, Current, and Voltage Characterization of Organic Light Emitting Devices," J. Vac. Sci. Technol., B 19, 546-550 (2001).
  • B. A. Baukol, J. C. Hitt, J. F. Wager, and S.-S. Sun, "Electroluminescence Thermal Quenching in Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 90, 2185-2190 (2001).
  • J. C. Hitt and J. F. Wager, "Insulator Issues in Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys., 90, 2711-2717 (2001).
  • R. L. Hoffman, J. F. Wager, M. K. Jayaraj, and J. Tate, "Electrical Characterization of Transparent p-i-n Heterojunction Diodes," J. Appl. Phys., 90, 5763-5767 (2001).
  • 2002

  • J. F. Wager, J. C. Hitt, B. A. Baukol, J. P. Bender, and D. A. Keszler, "Luminescent Impurity Doping Trends in Alternating-Current Thin-Film Electroluminescent Phosphors," J. Lumin., 97, 68-81 (2002).
  • S. Park, D. A. Keszler, M. M. Valencia, R. L. Hoffman, and J. F. Wager, "p-Type BaCu2S2 Films," Appl. Phys. Lett., 80, 4393-4394 (2002).
  • S. Park, B. L. Clark, D. A. Keszler, J. P. Bender, J. F. Wager, T. A. Reynolds, and G. Herman, "Low-Temperature Thin-Film Deposition and Crystallization," Science, 297, 65 (2002).
  • J. Tate, M. K. Jayaraj, A. D. Draeske, T. Ulbrich, A. W. Sleight, K. A. Vanaja, R. Ragarajan, J. F. Wager and R. L. Hoffman, "p-Type Oxides for use in Transparent Diodes," Thin Solid Films, 411, 119-124 (2002).
  • B. A. Cleary, P. D. Keir, J. C. Hitt, T. K. Plant, J. F. Wager, B. Aitchison, R. T. Tuenge, and S. S. Sun, "Subthreshold Voltage-Induced Transferred Charge Measurements of Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Soc. Info. Display, 10, 271-281 (2002).
  • J. P. Bender, J. F. Wager, J. Kissick, B. L. Clark, and D. A. Keszler, "Zn2GeO4:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. Lumin., 99, 311-324 (2002).
  • 2003

  • R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-Based Transparent Thin-Film Transistors," Appl. Phys. Lett., 82, 733-735 (2003).
  • J. F. Wager, "Transparent Electronics," Science, 300, 1245-1246 (2003).
  • R. L. Hoffman and J. F. Wager, "Energy Band Alignment of Injector / Insulator Heterojunctions," Thin Solid Films, 436, 286-291 (2003).
  • B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, "Spin-Coated Zinc Oxide Transparent Transistors," J. Phys. D., 36, L105-L107 (2003).
  • 2004

  • R. E. Presley, C. L. Munsee, C.-H. Park, D. Hong, J. F. Wager, and D. A. Keszler, "Transparent Tin Oxide Thin-Film Transistors," J. Phys. D., 37, 2810-2813 (2004).
  • 2005

  • H. Q. Chiang, R. L. Hoffman, J.-Y. Jeong, J. F. Wager, and D. A. Keszler, "High Mobility Transparent Thin-film Transistors with a Zinc Tin Oxide Channel Layer," Appl. Phys. Lett., 86, 013503-013505 (2005).
  • C. Munasinghe, J. Heikenfeld, R. Dorey, R. Whatmore, J. P. Bender, J. F. Wager, and A. J. Steckl, "High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers," IEEE Trans. Electron Dev., ED-52, 194-203 (2005).
  • N. L. DeHuff, E. S. Kettenring, D. Hong, C.-H. Park, H. Q. Chiang, R. L. Hoffman, and J. F. Wager, and D. A. Keszler, "Transparent Thin-Film Transistor with a Zinc Indium Oxide Channel Layer," J. Appl. Phys., 97, 064505:1-5 (2005).
  • D. Hong and J. F. Wager, "Passivation of Zinc Tin Oxide Thin-Film Transistors," J. Vac. Sci. Technol. B, 23, L25-L27 (2005).
  • Y.–J. Chang, C. L. Munsee, G. S. Herman, J. F. Wager, P. Mugdur, D.–H. Lee, and C.H. Chang, "Growth, characterization and application of CdS thin films deposited by chemical bath deposition," Surface and Interface Analysis, 37, 398-405 (2005).
  • 2006

  • R. E. Presley, D. Hong, H. Q. Chiang, C. M. Hung, R. L. Hoffman, and J. F. Wager, "Transparent Ring Oscillator based on Indium Gallium Oxide Thin-Film Transistors," Solid-State Electron., 50, 500-503. (2006).
  • D. Hong, H. Q. Chiang, R. E. Presley, N. L. Dehuff, J. P. Bender, C.-H. Park, J. F. Wager, D. A. Keszler, "Transparent Thin-Film Transistor Exploratory Development via Sequential Layer Deposition and Thermal Annealing," Thin Solid Films, 515, 2717-2721 (2006).
  • D. Hong, C. Q. Chiang, J. F. Wager, "Zinc Tin Oxide Thin-Film Transistors via Reactive Sputtering using a Metal Target," J. Vac. Sci. Technol. B, 24, L23-L25 (2006).
  • H. Q. Chiang, D. Hong, C. M. Hung, R. E. Presley, J. F. Wager, C.-H. Park, D. A. Keszler, and G. S. Herman, "Thin-film Transistors with Amorphous Indium Gallium Oxide Channel Layers," J. Vac. Sci. Technol. B, 24, 2702-2705 (2006).
  • 2007

  • M. S. Grover, P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler, "Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer," J. Physics D, 40, 1335-1338 (2007).
  • S. T. Meyers, J. T. Anderson, D. Hong, C. M. Hung, J. F. Wager, D. A. Keszler, "Solution-processed aluminum oxide phosphate thin-film dielectrics," Chem. Of Mater., 19, 4023-4029 (2007).
  • J. T. Anderson, C. L. Munsee, C. M. Hung, T. M. Phung, G. S. Herman, D. C. Johnson, J. F. Wager, and D. A. Keszler, "Solution-processed HafSOx and ZircSOx inorganic thin-film dielectrics and nanolaminates," Adv. Funct. Mater., 17, 2117-2124 (2007).
  • 2008

  • J. F. Wager, "Transparent electronics: Schottky barrier and heterojunction considerations, " Thin Solid Films, 516, 1755-1764 (2008).
  • P. T. Erslev, H. Q. Chiang, D. Hong, J. F. Wager, and J. D. Cohen, "Electronic properties of amorphous zinc tin oxide films by junction capacitance methods," J. Non-Crystalline Solids, 354, 2801-2804 (2008).
  • H. Q. Chiang, B. R. McFarlane, D. Hong, R. E. Presley, and J. F. Wager, "Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors," J. Non-Crystalline Solids, 354, 2826-2830 (2008).
  • J. F. Wager, "A simple procedure for phosphor assessment," J. Lumin., 128, 1851-1855 (2008).
  • S. T. Meyers, J. T. Anderson, C. M. Hung, J. Thompson, J. F. Wager, and D. A. Keszler, "Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs," J. Am. Chem. Soc., 130, 17603-17609 (2008).
  • 2009

  • D. P. Heineck, B. R. McFarlane, and J. F. Wager, "Zinc tin oxide thin-film transistor enhancement/depletion inverter," IEEE Electron Device Lett., 30, 514-516 (2009).
  • J. A. Spies, R. Schafer, J. F. Wager, P. Hersh, H. A. S. Platt, D. A. Keszler, G. Schneider, R. Kykyneshi, J. Tate, X. Liu, A. D. Compaan, W. N. Shafarman, "pin double-heterojunction thin-film solar cell p-layer assessment," Solar Energy Materials & Solar Cells, 93, 1296-1308 (2009).
  • K. Hoshino, D. Hong, H. Q. Chiang, and J. F. Wager, "Constant-voltage bias-stress testing of a-IGZO thin-film transistors," IEEE Trans. Electron Devices, 56, 1365-1370 (2009).
  • P. T. Erslev, E. Sundholm, R. E. Presley, D. Hong, J. F. Wager, and J. D. Cohen, "Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide," Appl. Phys. Lett., 95, 192115/1-192115/3 (2009).
  • 2010

  • B. R. McFarlane, P. Kurahashi, D. P. Heineck, R. E. Presley, E. Sundholm, and J. F. Wager, "Indium Gallium Oxide and Zinc Tin Oxide Thin-Film Transistor AC/DC Rectifiers," IEEE Electron Device Lett., 31, 314-316 (2010).
  • K. Hoshino and J. F. Wager, "Operating temperature trends in amorphous In-Ga-Zn-O thin-film transistors," IEEE Trans. Electron Devices, 31, 818-820 (2010).
  • J. Triska, J. F. Conley, Jr. R. Presley, J. F. Wager, "Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics," J. Vac. Sci. Technol. B, 28, C5I1-C5I6. (2010).
  • E. W. Cowell III, C. C. Knutson, J. F. Wager, and D. A. Keszler, "Amorphous Metal/Oxide Nanolaminate," ACS Appl. Materials & Interfaces, 2, 1811-1813 (2010).
  • J. F. Wager, Invited Paper for a special issue on Oxide TFT Device and Array Technologies, "Transfer curve assessment of oxide thin-film transistors," J. SID, 18, 749-752 (2010).
  • 2011

  • E. W. Cowell III, N. Alimardani, C. C. Knutson, J. C. Conley, Jr., B. J. Gibbons, D. A. Keszler, and J. F. Wager, "Advancing MIM electronics: amorphous metal contacts," Advanced Materials, 23, 74-78 (2011).
  • K. Jiang, J. T. Anderson, K. Hoshino, D. Li, J. F. Wager, and D. A. Keszler, "Low-energy path to dense HfO2 thin films with aqueous precursor," Chem. Mater., 23, 945-952 (2011).
  • J. F. Wager, "Solar cell absorber surfaces from an induced-gap states perspective," Solar Energy Materials & Solar Cells (submitted)
  • T. Waggoner, J. Triska, K. Hoshino, J. F. Wager, and J. F. Conley, Jr., "Zirconium aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors," J. Vac. Sci. Technol. B (submitted)
  • N. Alimardani, E. W. Cowell III, J. F. Wager, J. C. Conley, Jr., D. Evans, M. Chin, S. J. Kilpatrick, and M. Dubey, "Impact of electrode roughness on metal-insulator-metal tunnel diodes," Appl. Phys. Lett. (submitted)
  • J. F. Wager and J. Robertson, "Metal induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer," J. Appl. Phys. (submitted)
  • S. Lany, A. Zakutayev, T. O. Mason, J. F. Wager, K. R. Poeppelmeier, J. D. Perkins, J. J. Berry, D.S. Ginley, and A. Zunger, "Surface donors cause high conductivities in transparent oxide thin-films," Nature Materials (submitted)

Conference Proceedings

    1978

  • J. F. Wager and C. W. Wilmsen, "Auger Analysis of the Si02/Si Interface of Ultra thin Oxides," in The Physics of Si02 and Its Interfaces, S. T. Pantelides, Ed. Pergamon Press, New York, 373 (1978).
  • J. DuBow, G. Cheek, A. P. Genis, C. W. Wilmsen, J. F. Wager, and J. Shewchun, "Influence of the Interface Upon the Properties of ITO/Silicon SIS Solar Cells," Conference Record 13th IEEE Photovoltaic Specialists Conference, 767 (1978).
  • 1980

  • S. M. Goodnick, J. F. Wager, and C. W. Wilmsen, "Degradation of ITO/p-Silicon Solar Cells," Conference Record 14th IEEE Photovoltaic Specialists Conference, 1175 (1980).
  • C. W. Wilmsen, J. F. Wager, and J. Stannard, "CVD Si02/InP Interface," Inst. Phys. Conf. Ser., No. 50, 251 (1980).
  • 1985

  • J. F. Wager and J. A. Van Vechten, "Identification of M Centers in InP," Mat. Res. Soc. Proc., 46, 325 (1985).
  • 1986

  • J. F. Wager, "Electrical Characterization of MIS Interfaces," SPIE Vol. 623 Advanced Processing and Characterization of Semiconductors III, 45 (1986).
  • 1987

  • M. T. Juang, J. F. Wager, and J. A. Van Vechten, "Phosphorous Vacancy Nearest-Neighbor Hopping Instabilities in InP Capacitors," in Dielectric Films on Compound Semiconductors (1987).
  • S. B. Kim and J. F. Wager, "Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition," in Atomic and Molecular Processing of Electronic and Ceramic Materials, I.A. Asay, G.L. McVay, T.G. Stoebe, and J.F. Wager, Editors, 53 (1987).
  • 1988

  • T. W. Dobson, J. F. Wager, and J. A. Van Vechten, "Entropy of Atomic Hopping in Diffusion and Defect Transformations," Mat. Res. Soc. Proc., (1988).
  • 1989

  • I. Khormaei, J. F. Wager, and C. N. King, "Improved Stability of ZnS:Mn ACTFEL Devices," SID89 Digest, 65 (1989).
  • T. W. Dobson and J. F. Wager, "Experimental Confirmation of the Donor-Like Nature of DX in AlGaAs," Mat. Res. Soc. Symp. Proc., 148, 445 (1989).
  • 1990

  • R. C. McArthur, J. D. Davidson, J. F. Wager, I. Khormaei, and C. N. King, "Characterization of ZnS:Mn AC Thin-Film Electroluminescent Devices by Capacitance-Voltage Analysis," Acta Polytechnica Scandinavia Ph, 170, 181 (1990).
  • J. D. Davidson, J. F. Wager, I. Khormaei, and C. N. King, "Aging Instabilities of ZnS:Mn AC Thin-Film Electroluminescent Devices," Acta Polytechnica Scandinavia Ph, 170, 185 (1990).
  • 1991

  • J. D. Davidson, I. Khormaei, and J. F. Wager, "Electrical Characterization and SPICE Modeling of ZnS:Mn ACTFEL Devices," SID91 Digest, 77 (1991).
  • I. Khormaei, C. N. King, R. E. Coovert, and J. F. Wager, "Stabilization of ZnS:Mn ACTFEL Devices Through Processing Modifications," SID91 Digest, 74 (1991).
  • L. V. A. Scalvi and J.F. Wager, "The Transient Decay of Persistent Photoconductivity in AlxGa1-xAs: Measurements and Simulations," 5th Brazilian School on Semiconductor Physics, J.R. Leite, A. Fazzio, and A.S. Chaves, Editors, 287 (1991).
  • 1992

  • J. F. Wager, A. A. Douglas, and D. C. Morton, "Electrical Characterization and Modeling of ACTFEL Devices," Electroluminescence, edited by V.P. Singh and J.C. McClure (Cinco Puntos Press, El Paso), p. 92, (1992).
  • A. A. Douglas and J. F. Wager, "Electrical Characterization and Modeling of ZnS:Mn ACTFEL Devices with Various Pulse Waveforms," SID 92 Digest, 356 (1992).
  • K. Bhattacharyya, S. M. Goodnick, and J. F. Wager, "Monte Carlo Simulation of High Field Electron Transport in Alternating-Current Thin-Film Electroluminescent Devices," Electro-luminescence, edited by V.P. Singh and J.C. McClure (Cinco Puntos Press, El Paso), p. 54, (1992).
  • S. Kobayashi, A. Abu-Dayah, and J. F. Wager, "Distribution of Trapped Electrons at Interface States in ACTFEL Devices," Electroluminescence, edited by V.P. Singh and J.C. McClure (Cinco Puntos Press, El Paso), p. 234, (1992).
  • A. A. Douglas and J. F. Wager, "ACTFEL Device Response to Systematically Varied Pulse Waveforms," Electroluminescence, edited by V.P. Singh and J.C. McClure (Cinco Puntos Press, El Paso), p. 387, (1992).
  • L. V. A. Scalvi and J. F. Wager, "The Energy Barrier for Electron Trapping in AlxGa1-xAs," Proc. 6th Brazilian School on Semiconductor Physics, Sao Paulo, Brazil, 1992.
  • S. Lim, J. H. Ryu, and J. F. Wager, "Inhomogeneous Dielectrics Grown by Plasma-Enhanced Chemical Vapor Deposition," International Conference on Metallurgical Coatings and Thin Films, (1992).
  • 1993

  • A. Abu-Dayah, J. F. Wager, and S. Kobayashi, "Electrical Characterization of ALE ZnS:Mn ACTFEL Devices," SID 93 Digest, 581 (1993).
  • A. A. Douglas, J. F. Wager, K. Bhattacharyya, S. M. Goodnick, D. C. Morton, J. B. Koh, and C. P. Hogh, "Hot Electron Luminescence in ZnS ACTFEL Devices," SID 93 Digest, p. 851 (1993).
  • 1994

  • L. V. Pham, J. F. Wager, S. S. Sun, E. Dickey, R. T. Tuenge, and C. N. King, "Electrical Characterization of Blue Electroluminescent Devices," IS&T/SPIE Symposium on Electronic Imaging Science & Technology, February 6-10, 1994, San Jose, CA, SPIE Vol. 2174, p. 190 (1994).
  • S. Pennathur, K. Bhattacharyya, J. F. Wager and S. M. Goodnick, "Fullband Ensemble Monte Carlo Modeling Of High-Field Transport in the ZnS Phosphor of AC Thin Film Electroluminescent Devices," Proceedings of the Third International Workshop on Computational Electronics, edited by S.M. Goodnick, 288-291 (1994).
  • J. F. Wager, W. M. Ang, S. Pennathur, L. Pham, S. M. Goodnick, and A. A. Douglas, "Impact Ionization in Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," International Symposium on Inorganic and Organic Luminescence, October 5-6, 1994, Hamamatsu, Japan.
  • J. F. Wager, "A Comparison of ZnS:Mn ACTFEL Devices Prepared by Evaporation and Atomic Layer Epitaxy," Proceedings of the 1994 International Workshop on Electroluminescence, edited by Xurong Xu (Science Press, Beijing), p. 49 (1994).
  • S. Lim, B.H. Chang, J. F. Wager, and M. H. Oh "Electrical Characterization of Sr(S,Se):Ce, Cl Alternating-Current Thin-Film Electroluminescent Devices," Proceedings of the 1994 International Workshop on Electroluminescence, edited by Xurong Xu (Science Press, Beijing), p. 371 (1994).
  • J. F. Wager, S. Lim, J. H. Ryu, J. Marlia, K. Remley, K. Lite, T. K. Plant, A. Weisshaar, and L. M. Casas, "Compositionally Inhomogeneous Silicon Oxynitride Dielectrics," Spring Meeting of the Electrochemical Society, San Francisco California, May 24, 1994.
  • 1995

  • P. D. Keir, W. M. Ang, and J. F. Wager, "Modeling Space Charge in ACTFEL Devices using a Single Sheet Charge Model," SID 95 Digest, 476 (1995).
  • R. L. Thuemler, P. D. Keir, and J. F. Wager, "Phosphor Field Dependence in ALE SrS:Ce ACTFEL Devices," SID 95 Digest, 473, (1995).
  • P. Rack, P. Holloway, S. S. Sun, E. Dickey, C. King, L. Pham, and J. F. Wager, "Brighter Blue Electroluminescent Devices with an Enhanced Electron Injection Layer," SID 95 Digest, 480 (1995).
  • J. A. Samuels, D. C. Smith, K. N. Siebein, K. Salazar, R. T. Tuenge, C. F. Shaus, C. N. King, H. Le, J. Hitt, R. L. Thuemler, and J. F. Wager, "MOCVD of SrS and SrS:Ce Thin Films for Electroluminescent Flat Panel Displays," Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II Symposium, p. 15, (1995).
  • J. F. Wager, P. D. Keir, R. L. Thuemler, and S. Shih, "Thin-Film Electroluminescent Device Space-Charge Modeling," 1st International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 55 (1995).
  • M. Peter, K. Lite, K. Streicher, T. K. Plant, and J. F. Wager, "Hot Electron Impact Excitation in Thin-Film Electroluminescent Devices," 1st International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 61 (1995).
  • 1996

  • P. D. Keir and J. F. Wager, "SPICE Modeling of Dynamic Space Charge in Alternating-Current Thin-Film Electroluminescent Devices," SID 96 Digest, 305 (1996).
  • S. Lim, S. J. Kim, J. H. Jung, B. K. Ju, M. H. Oh, and J. F. Wager, "High Quality Silicon-Nitride Thin Films Grown by Helium Plasma-Enhanced Chemical Vapor Deposition." 9th International Vacuum Microelectronics Conference IVMC’96, 406 (1996).
  • J. C. Hitt and J. F. Wager, "Static Space Charge in Evaporated ZnS:Mn TFEL Devices," 2nd International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 81 (1996).
  • J. F. Wager, "Electroluminescent Phosphors: Point Defects," Inorganic and Organic Electroluminescence, edited by R.H. Mauch and H.-E. Gumlich (Wissenchaft and Technik Verlag, Berlin), p.33 (1996).
  • I. Lee, S. Pennathur, K. Streicher, T. K. Plant, J.F. Wager, P. Vogl, and S.M. Goodnick, "High-Field Electron Transport of the ZnS Phosphor in AC Thin-Film Electroluminescent Devices," Inst. Phys. Conf. Ser., No. 145, 1229 (1996).
  • 1997

  • S. S. Lee, S. Lim, S. S. Sun, J.F. Wager, "Photoluminescence and Electroluminescence Characteristics of CaSiN2:Eu Phosphor," Proceedings of the SPIE, 3241, 75 (1997).
  • D.R. Beck, J. F. Wager, L. Arbuthnot, and T. Flegal, "AMEL Power Considerations," SID 97 Digest, 615 (1997).
  • B. A. Cleary, P. D. Keir, J. C. Hitt, T. K. Plant, and J. F. Wager, "Photo-induced Charge and Luminance Measurements of Evaporated ZnS:Mn ACTFEL Devices," 3rd International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 65 (1997).
  • J. B. Peery, P. D. Keir, W. M. Ang, and J. F. Wager, "Simulation of Evaporated ZnS:Mn ACTFEL Devices," 3rd International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 69 (1997).
  • S. S. Lee, S. Lim, S. S. Sun, J. F. Wager, "Photoluminescence and Electroluminescence Characteristics of CaSiN2:Eu Phosphor," 3rd International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 69 (1997).
  • 1998

  • S. S. Lee, S. Lim, S. S. Sun, J. F. Wager, "A New CaSiN2:Eu Phosphor for Thin-Film Electroluminescent Device Applications," SID 98 Digest, (1998).
  • B. J. Norris, J. P. Bender, and J. F. Wager, "Steady-State Transient Current-Voltage Characterization of OLEDs," 4th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 83 (1998).
  • J. P. Bender, B. J. Norris, and J. F. Wager, "OLED Modeling via SPICE," 4th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 87 (1998).
  • B. A. Cleary, P. D. Keir, J. C. Hitt, T. K. Plant, and J. F. Wager, B. Aitchison, R. T. Tuenge, and S. -S. Sun, "Subthreshold Voltage-Induced Transferred Charge Analysis of ZnS:Mn TFEL Devices," 4th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 291 (1998).
  • C. A. Nevers, B. A. Cleary, T. K. Plant, and J. F. Wager, S. Moehnke, and R. T. Tuenge, "Photo-induced Charge and Luminescence Measurements of ALE SrS:Ce TFEL Devices," 4th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 291 (1998).
  • 1999

  • J. C. Hitt and J. F. Wager, "An n-Sheet State-Space TFEL Device Model, " 5th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 69 (1999).
  • B. A. Baukol, P. D. Keir, J. C. Hitt, B. L. Clark, D. A. Keszler, and J. F. Wager, "EL Thermal Quenching in SrS:Cu TFEL Devices," 5th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 89 (1999).
  • B. L. Clark, D. Li, D. A. Keszler, P. D. Keir, and J. F. Wager, "Saturated Green Electroluminescence from SrS TFEL Devices," 5th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, 125 (1999).
  • S. Lim, H. Chang, and J. F. Wager, "Inhomogeneous Thin Film Optical Coatings for Flat Panel Display Application," SID 99 Digest, (1999).
  • 2000

  • B. A Baukol, J. F. Wager, and S. Moehnke, "Cu Doping of Atomic Layer Epitaxy SrS via a Rapid Thermal Anneal Process," SID 00 Digest, 656 (2000).
  • B. A. Baukol, J. F. Wager, J. Ihanus, M. Leskela, and R. Tuenge, "Eu+2-doped ALE SrS and CaS Red TFEL Phosphors," 6th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, pgs. 153-157, (2000).
  • B. L. Clark, D. A. Keszler, J. P. Bender, and J. F. Wager, "Photo- and Electroluminescence in Zinc Germanate and Zinc Silicate Powders and ACTFEL Devices," 6th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, pgs. 145-148, (2000).
  • J. P. Bender and J. F. Wager, "ACTFEL Device Modeling via SPICE," 6th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, pgs. 69-73 (2000).
  • V. Bondar, L. Axelrud, V. Davydov, Y. Dubov, S. Popovich, J. F. Wager, and J. P. Bender, "Synthesis and Properties of Phosphors Based on Zn2GeO4:Mn for Electroluminescent and Field-Emission Displays," 6th International Conference on the Science and Technology of Display Phosphors Extended Abstracts, pgs. 79-82, (2000).
  • 2001

  • M. K. Jayaraj, A. D. Draeseke, J. Tate, R. L. Hoffman, and J. F. Wager, "Transparent pn Heterojunction Thin Film Diodes," Materials Research Society Symposium Proceedings, Vol. 666 (Transport and Microstructural Phenomena in Oxide Electronics), pgs. F4.1-F4.9 (2001).
  • V. Bondar, S. Popovich, T. Felter, and J. Wager, "Low-temperature technology and physical processes in green thin-film phosphor Zn2GeO4-Mn," Materials Research Society Symposium Proceedings, Vol. 667 (Luminescence and Luminescent Materials), pgs. G7.1-G7.6 (2001).
  • J. P. Bender and J. F. Wager, "ACTFEL Devices with Zn2GeO4:Mn Phosphors," 1st Inernational Conference on the Science and Technology of Emissive Displays and Lighting Extended Abstracts, pgs. 103-106, (2001).
  • H. Q. Chiang, B. A. Baukol, J. C. Hitt, J. P. Bender and J. F. Wager, "A Simple Method for Estimating Space Charge in ACTFEL Devices," 1st Inernational Conference on the Science and Technology of Emissive Displays and Lighting Extended Abstracts, pgs. 173-176 (2001).
  • 2002

  • J. F. Wager, "Inorganic Thin Film Electroluminescent Phosphors," Proceedings of the 2nd International Display Manufacturing Conference, J. Jang (editor), pgs. 511-513 (2002).
  • J. P. Bender, J. F. Wager, S. Park, B. L. Park, and D. A. Keszler, "Inorganic Phosphors and ACTFEL Devices on Flexible Plastic Substrates," Proceedings of the 11th International Workshop on Inorganic and Organic Electroluminescence, K. Neyts, P. De Visschere, and D. Poelman (editors), p. 307-310, (2002).
  • J. F. Wager, J. C. Hitt, B. A. Baukol, J. P. Bender, and D. A. Keszler, "Thin Film Electroluminescent Phosphor Luminescent Impurity Doping Trends," Proceedings of the 11th International Workshop on Inorganic and Organic Electroluminescence, K. Neyts, P. De Visschere, and D. Poelman (editors), pgs. 37-40 (2002).
  • S. Park, J. P. Bender, J. F. Wager, and D. A. Keszler, "Low-temperature oxide thin-film deposition and crystallization," Abstracts of Papers, IONR-246, 224th ACS National Meeting, Boston, MA, United States, August 18-22, 2002.
  • 2003

  • J. F. Wager, M. M. Valencia, J. P. Bender, B. J. Norris, H. Q. Chiang, D. Hong, L. N. Norris, T. V. Harman, S. Park, J. Anderson, C.-H. Park and D. A. Keszler, J. Tate, H. Yanagi, M. Price, and R. L. Hoffman,"Transparent Electronics and Prospects for Transparent Displays," Proceedings of SPIE (Vol. 5080 Cockpit Displays X), D. G. Hopper (ed), pgs. 330-339 (2003).
  • D. Hong, N. DeHuff, R. L. Hoffman, B. J. Norris, H. Q. Chiang, J. P. Bender, J. T. Anderson, J. F. Wager, D. A. Keszler, "Transparent Transistor Development," Materials Research Society Symposium Proceedings (2004), 796 (Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices), 99-104 (2003).
  • 2004

  • Y.-J. Chang, D.-H. Lee, C.-H. Chang, C. Munsee, J. F. Wager, Greg Herman, J. Anderson, D. A. Keszler, "Growth, Characterization, and Application of Semiconductor Thin Films Deposited by Chemical Bath Deposition," 26th Annual Symposium on Applied Surface Analysis, 15th Annual Symposium of the Pacific Northwest Chapter of the American Vacuum Society, June 15-18, 2004.
  • J. P. Bender and J. F. Wager, "ACTFEL Devices with MgS Phosphor Layers," Electroluminescence Conference 2004 Proceedings, Toronto, Canada, 56-59 (2004).
  • J. P. Bender and J. F. Wager, "Improved Aging and Luminance of Zn2GeO4:Mn ACTFEL Devices with BTO Insulator Layers," Electroluminescence Conference 2004, Toronto, Canada, 344-346 (2004).
  • 2005

  • J. F. Wager, Invited Paper: "ZnO Transparent Thin-Film Transistor Device Physics," NATO Science Series II: Mathematics, Physics and Chemistry (2005), 194(Zinc Oxide), 217-224 (2005).
  • 2007

  • J. F. Wager, Invited paper: "Transparent Electronics: Display Applications?" Digest of Technical Papers – Society for Information Display International Symposium, 38, 1824-1825 (2007).
  • J. F. Wager, Invited Paper: "Transparent Electronics: An Enabling Display Technology?" IDMC’07 Proceedings, 369-370 (2007).
  • Brian R. McFarlane, Hai Q. Chiang, David Hong, Rick Presley, and John F. Wager, Poster Paper: "Processing effects on the stability of amorphous indium gallium zinc oxide thin film transistors," 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge, CO, August 19-24, (2007).
  • 2008

  • J. F. Wager, "Electroluminescent phosphor assessment," Proceedings of the 14th International Conference on Inorganic and Organic Electroluminescence, 417-419, Tivoli, Italy, September 9-12 (2008).
  • 2009

  • J. F. Wager, Invited Paper: "Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications," Digest of Technical Papers – Society for Information Display International Symposium, 40, 181-183 (2009).

Invited Conference Presentations

    1985

  • J. F. Wager, S. J. Prasad, and S. J. T. Owen, "InP MISFET Technology: Interface Considerations," Symposium on "Dielectric Films on Compound Semiconductors," Electro-chemical Society Meeting, Las Vegas, NV, October 11-17, 1985.
  • 1986

  • J. F. Wager, "Electrical Characterization of Metal-Insulator-Semiconductor Interfaces," Conference on "Advanced Processing and Characterization of Semiconductors," SPIE's O-E LASE '86, Los Angeles, CA, January 19-24, 1986.
  • 1992

  • J. F. Wager, A. A. Douglas, and D. C. Morton, "Electrical Characterization and Modelling of ACTFEL Devices," EL-92, Sixth International Workshop on Electroluminescence, El Paso, TX, May 11-13, 1992.
  • 1993

  • J. F. Wager, "Electrical Characterization of ACTFEL Devices," VTT Research Center of Finland, Espoo, Finland, November 23, 1993.
  • 1994

  • J. F. Wager, "Electroluminescence Research at OSU," Invited Talk, OCATE Lectures in Advanced Technology, Beaverton, OR, January 21, 1994.
  • J. F. Wager, "Compositionally Inhomogeneous Silicon Oxynitride Dielectrics," Spring Meeting of the Electrochemical Society, San Francisco California, May 24, 1994.
  • J. F. Wager, "Thin-Film Electroluminescence: A Tutorial," Advanced Displays Technologies International School, August 28-September 4, 1994, Lviv, Ukraine.
  • J. F. Wager, International Symposium on Inorganic and Organic Luminescence, October 5-6, 1994, Hamamatsu, Japan.
  • J. F. Wager, "Alternating-Current Thin-Film Electroluminescence: An Overview," Korea Institute of Science and Technology, October 7, 1994, Seoul, Korea.
  • J. F. Wager, "A Comparison of ZnS:Mn ACTFEL Devices Prepared by Evaporation and Atomic Layer Epitaxy," 7th International Workshop on Electroluminescence (EL'94), October 10-12, 1994, Beijing China.
  • 1995

  • J. F. Wager, P. D. Keir, R. T. Thuemler, and S. Shih, "Thin-Film Electroluminescent Device Space Charge Modeling," First International Conference on the Science and Technology of Display Phosphors, San Diego, CA, November 14-16, 1995.
  • 1996

  • J. F. Wager, "Characterization and Modeling of Thin-Film Electroluminescent Devices," American Ceramic Society's 1996 Annual Meeting and Exposition, Indianapolis, IN, April 14-17, 1996.
  • J. F. Wager, S. Lim, J. H. Ryu, S. Shih, J. Marlia, K. Remley, K. Lite, T.K. Plant, and A. Weisshaar, "Compositionally Inhomogeneous Silicon Oxynitride Dielectrics Grown by Plasma-Enhanced Chemical Vapor Deposition", Workshop on Advanced Technologies of Multicomponent Solid Films and Structures and Their Applications in Photonics, Uzhgorod, Ukraine, September 25-27,1996.
  • 2000

  • J. F. Wager, "Modeling Inorganic and Organic Thin Film EL Devices," 10th International Workshop on Inorganic and Organic Electroluminescence, Hamamatsu, Japan, December 4-7, 2000.
  • J. F. Wager, "Electroluminescence," a short-course consisting of 8 lectures, National Defense Academy, Yokosuka, Japan, November 27- December 1, 2000.
  • 2001

  • J. F. Wager, "Optically Transparent Electronics," Optical Materials for Future Devices and Systems, Clearwater Beach, FL, September 11-12, 2001.
  • 2002

  • J. F. Wager, "Inorganic Thin-Film Electroluminescent Phosphors," 2nd International Display Manufacturing Conference, Seoul, Korea, January 29-31, 2002.
  • 2003

  • J. F. Wager, M. M. Valencia, J. P. Bender, B. J. Norris, H. Q. Chiang, D. Hong, L. N. Norris, T. V. Harman, S. Park, J. Anderson, C.-H. Park and D. A. Keszler, J. Tate, H. Yanagi, M. Price, and R. L. Hoffman, "Transparent Electronics and Prospects for Transparent Displays," SPIE Aerosense/Defense Symposium, Orlando, FL, 21-25 April 21-25, 2003.
  • J. F. Wager, H. Q. Chiang, D. Hong, B. J. Norris, J. P. Bender, M. M. Valencia, C.-H. Park, J. Anderson, J.-Y. Jeong, D. A. Keszler, H. Yanagi, M. Price, J. Tate, and R. L. Hoffman, "Transparent Electronics: Materials, Devices, and Applications," AVS 50th International Symposium, Baltimore, MD, Nov. 2 - 7, 2003.
  • 2004

  • J. F. Wager, "ZnO Transparent Thin-Film Transistor Device Physics," NATO Advanced Research Workshop on ZnO as a Material for Micro- and Optoelectronic Applications, St. Petersburg, Russia, June 23-25, 2004.
  • J. F. Wager, "Transparent Thin-Film Transistors," 3rd Brazil MRS Meeting, Foz de Iguacu, Brazil, October 10-13, 2004.
  • 2005

  • J. F. Wager, "A New Class of Electronic Materials for Printed Electronics," Printed Electronics 2005, Cambridge, UK, April 19-21, 2005.
  • J. F. Wager, "Transparent Thin-Film Transistors with Amorphous Channel Layers," IMCAT 2005 & IUMRS-ICAM 2005, Singapore, July 3-8, 2005.
  • J. F. Wager, "Amorphous Multicomponent Heavy Metal Cation Oxides for Transparent Thin-Film Transistor Applications," MRS Fall Meeting, Boston, MA, November 28, December 2, 2005. (Selected as one of "Top 5 Hot Talks/Cool Papers")
  • 2007

  • J. F. Wager, "Transparent Electronics: Display Applications?" Society of Information Display 2007 SID International Symposium, Long Beach, CA, May 22-25, (2007).
  • J. F. Wager, "Transparent Electronics: An Enabling Display Technology?" International Display Manufacturing Conference, Taipei, Taiwan, July 3-6, 2007.
  • J. F. Wager, "Amorphous Multi-component Oxides: Materials of Choice for Transparent Electronics?" 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge, CO, August 19-24, (2007).
  • 2008

  • J. F. Wager, "Prospects for Flexible and/or Transparent Electronics," EMRS, Warsaw, Poland, September 15-19 (2008).
  • J. F. Wager, "Electron Trapping in Transparent Thin-Film Transistors," 2nd International Symposium on Transparent Oxides, Hersonissos, Crete, October 22-26, 2008.
  • 2009

  • J. F. Wager, "Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications," Society of Information Display 2009 (SID) International Symposium, San Antonio, TX, June 1-5, (2009).
  • 2010

  • J. F. Wager, L. D. Di Domenico, C. P. Williams, D. A. Keszler, and A. Grenville, "Transparent Electronics and Emerging Solar Opportunities," plenary speaker at SPIE's Solar Energy + Technology Symposium, San Diego, CA, 1 - 5 August (2010).
  • J. F. Wager, D. A. Keszler, and A. Grenville, "Solution-Processed Inorganic Thin-Films for Flexible and Printable Electronics," International Workshop on Printed & Flexible Electronics, Muju Resort, Korea 8 - 10 September (2010).
  • J. F. Wager, "Flexible Electronics: Hither and Thither," plenary speaker at Transparent Conductive Materials 2010, Hersonissos, Crete, October 17 - 21, 2010.
  • J. F. Wager, K. Hoshino, L. E. Feller, and R. E. Presley "Low Temperature Processed Amorphous Oxide Semiconductor Thin-Film Transistors," MRS Fall Meeting, Boston, MA, November 29 – December 3, 2010.
  • 2011

  • J. F. Wager, "Oxide thin-thin transistor assessment," FPD China 2011, Shanghai, China, March 15 – 17, 2011.
  • J. F. Wager, "Amorphous oxide semiconductor thin-thin transistors," AVS 58th International Symposium and Exhibition, Nashville, TN, October 3 – November 4, 2011.
  • J. F. Wager, "Oxide Electronics," International Display Workshop 2011 (IDW '11), Nagoya, Japan, December 7-9, 2011.

Conference Presentations

    1978

  • J. F. Wager and C. W. Wilmsen, "Determination of SiO2 at the Indium Tin Oxide/Si Solar Cell Interface," Electrochemical Society Meeting, Seattle, WA, June 1978.
  • 1981

  • J. F. Wager, D. L. Ellsworth, S. M. Goodnick, and C. W. Wilmsen, "Composition and Thermal Stability of Thin Native Oxides on InP," 8th Annual Conference on the Physics of Compound Semiconductor Interfaces, Williamsburg, VA, January 1981.
  • 1983

  • J. F. Wager, K. M. Geib, C. W. Wilmsen, and L. L. Kazmerski, "Native Oxide Formation and Electrical Instabilities at the Insulator/InP Interface," 10th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, Santa Fe, NM, January 1983.
  • 1984

  • J. F. Wager, M. D. Clark, and R. A. Jullens, "SiO2/InP Interfaces with Reduced Interface State Density," 11th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, Pinehurst, NC, January 1984.
  • J. F. Wager and D. R. Rhiger, "Surface Characterization of Hg0.7Cd0.3Te Native Oxides," 1984 Workshop on the Physics and Chemistry of Mercury Cadmium Telluride, San Diego, CA, May 1984.
  • 1985

  • J. F. Wager and J. A. Van Vechten, "Identification of the M Center in InP: Implications of the Asymmetry of Vacancy Migration Energies," Materials Research Society Meeting, San Francisco, CA, April 15-18, 1985.
  • 1986

  • J. F. Wager, "Metastable Properties of Defects in Compound Semiconductors," Electrochemical Society Meeting, Oregon Section of the Electrochemical Society, Corvallis, OR, November 1986.
  • B. Rastegar and J.F. Wager, "Surface Recombination of Compound Semiconductors," SILI-CON 1986, Portland, OR, June 30-July 2, 1986.
  • 1987

  • J. F. Wager and J. A. Van Vechten, "Atomic Models for EL2 and EL0 in GaAs," Gordon Conference, Plymouth, NH, July 1987.
  • S. B. Kim and J. F. Wager, "Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition," Atomic and Molecular Processing of Electronic and Ceramic Materials, Seattle, WA, August 30-September 2, 1987.
  • M. T. Juang, J. F. Wager, and J. A. Van Vechten, "Phosphorous Vacancy Nearest-Neighbor Hopping Induced Instabilities in InP Capacitors," Electrochemical Society Fall Meeting, Honolulu, HI, October 18-23, 1987.
  • S. B. Kim and J. F. Wager, "Diamond-Like Carbon as an Electroluminescent Material," Electrochemical Society Fall Meeting, Honolulu, HI, October 18-23, 1987.
  • 1988

  • T. W. Dobson and J. F. Wager, "Experimental Confirmation of the Donor-Like Nature of DX in AlGaAs," Materials Research Society Spring Meeting, San Diego, CA, April 1988.
  • T. W. Dobson, J. F. Wager, and J. A. Van Vechten, "Entropy of Atomic Hopping in Diffusion and Defect Transformations," Materials Research Society Fall Meeting, Boston, MA, November 28-December 3, 1988.
  • 1989

  • I. Khormaei, J. F. Wager, and C. N. King, "Improved Stability of ZnS:Mn ACTFEL Devices," 1989 Society for Information Display International Symposium, Baltimore, MD, May 1989.
  • 1990

  • S. B. Kim, J. F. Wager, and D. C. Morton, "Diamond-Like Carbon for Electroluminescent Applications," International Conference on Thin Films and on Metallurgical Coatings, San Diego, CA, April 1990.
  • R. C. McArthur, J. D. Davidson, I. Khormaei, J. F. Wager, and C. N. King, "Characterization of ZnS:Mn AC Thin-Film Electroluminescent Devices by Capacitance-Voltage Analysis," 5th International Workshop on Electroluminescence, Helsinki, Finland, June 1990.
  • J. D. Davidson, J. F. Wager, I. Khormaei, and C. N. King, "Aging Characteristics of ZnS:Mn AC Thin-Film Electroluminescent Devices," 5th International Workshop on Electroluminescence, Helsinki, Finland, June 1990.
  • J. D. Davidson, J. F. Wager, I. Khormaei, and C. N. King, "ZnS:Mn AC Thin-Film Electro-luminescent Device Aging Characteristics," Oregon Conference on Modern Optics Research, Corvallis, OR, September 1990.
  • J. J. Krebs, W. M. Ang, and J. F. Wager, "AlInN Electroluminescence," Oregon Conference on Modern Optics Research, Corvallis, OR, September 1990.
  • J. D. Davidson, J. F. Wager, I. Khormaei, and C. N. King, "Aging Instabilities of ZnS:Mn AC Thin-Film Electroluminescent Devices as Monitored by Capacitance-Voltage Analysis," Electrochemical Society Meeting, Seattle, WA, October 1990.
  • S. B. Kim and J. F. Wager, "Low Temperature Hole Capture Cross Section of the DX Center in AlGaAs," Electrochemical Society Meeting, Seattle, WA, October 1990.
  • 1991

  • J. D. Davidson, I. Khormaei, and J. F. Wager, "Electrical Characterization and SPICE Modeling of ZnS:Mn ACTFEL Devices," 1991 Society for Information Display International Symposium, Anaheim, CA, May 1991.
  • 1992

  • A. A. Douglas and J. F. Wager, "Electrical Characterization and Modeling of ZnS:Mn ACTFEL Devices with Various Pulse Waveforms," 1992 Society for Information Display International Symposium, Boston, MA, May 1992.
  • K. Bhattacharyya, S. M. Goodnick, and J. F. Wager, "Monte Carlo Simulation of High Field Electron Transport in Alternating-Current Thin-Film Electroluminescent Devices," EL-92, Sixth International Workshop on Electroluminescence, El Paso, TX, May 11-13, 1992.
  • S. Kobayashi, A. Abu-Dayah, and J. F. Wager, "Distribution of Trapped Electrons at Interface States in ACTFEL Devices," EL-92, Sixth International Workshop on Electroluminescence, El Paso, TX, May 11-13, 1992.
  • A. A. Douglas and J. F. Wager, "ACTFEL Device Response to Systematically Varied Pulse Waveforms," EL-92, Sixth International Workshop on Electroluminescence, El Paso, TX, May 11-13, 1992.
  • A. A. Douglas, J. F. Wager, D. C. Morton, J. B. Koh, and C. P. Hogh, "Space Charge in ZnS:Mn Electroluminescent Devices," Electrochemical Society Fall Meeting, Toronto, Canada, October 11-16, 1992.
  • A. A. Douglas, J. F. Wager, D. C. Morton, J. B. Koh, and C. P. Hogh, "Hot Electron Lumi-nescence in ZnS:Mn Electroluminescent Devices," Electrochemical Society Fall Meeting, Toronto, Canada, October 11-16, 1992.
  • 1993

  • A. Abu-Dayah, J. F. Wager, and S. Kobayashi, "Electrical Characterization of ALE ZnS:Mn Electroluminescent Devices," 1993 Society for Information Display International Symposium, Seattle, WA, May 1993.
  • A. A. Douglas, J.F. Wager, K. Bhattacharrya, S. M. Goodnick, D. C. Morton, J. B. Koh, and C. P. Hogh, "Hot Electron Luminescence in ZnS ACTFEL Devices," 1993 Society for Information Display International Symposium, Seattle, WA, May 1993.
  • S. Lim, J. H. Ryu, and J. F. Wager, "Inhomogeneous Dielectrics Grown by Plasma-Enhanced Chemical Vapor Deposition," International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, April 1993.
  • 1994

  • L. V. Pham, J. F. Wager, S. S. Sun, E. Dickey, R. T. Tuenge, and C. N. King, "Electrical Characterization of Blue Electroluminescent Devices," IS&T/SPIE Conference on Advanced Flat Panel Display Technologies, 7-8 February 1994, San Jose, California.
  • S. Pennathur, K. Bhattacharyya, J. F. Wager and S. M. Goodnick, "Fullband Ensemble Monte Carlo Modeling Of High-Field Transport in the ZnS Phosphor of AC Thin Film Electroluminescent Devices," International Workshop on Computational Electronics, Portland, Oregon, May 20, 1994.
  • 1995

  • P. D. Keir, W. M. Ang, and J. F. Wager, "Modeling Space Charge in ACTFEL Devices using a Single Sheet Charge Model," Society for Information Display International Symposium, Orlando, Florida, May 22-26, 1995.
  • R. L. Thuemler, P. D. Keir, and J. F. Wager, "Phosphor Field Dependence in ALE SrS:Ce ACTFEL Devices," Society for Information Display International Symposium, Orlando, Florida, May 22-26, 1995.
  • P. Rack, P. Holloway. S. S. Sun, E. Dickey, C. King, L. Pham, and J. F. Wager, "Brighter Blue Electroluminescent Devices with an Enhanced Electron Injection Layer," Society for Information Display International Symposium, Orlando, Florida, May 22-26, 1995.
  • I. Lee, S. S. Pennathur, S. M. Goodnick, and J .F. Wager, "Band Structure and High-Field Electronic Transport in Alternating-Current Thin-Film Electroluminescent Devices," Spring Meeting of the Materials Research Society, San Francisco, April 17-21, 1995.
  • M. Peter, K. Lite, K. Streicher, T. K. Plant, and J. F. Wager, "Hot Electron Impact Ionization in Thin-Film Electroluminescent Devices," 1st International Conference on the Science and Technology of Display Phosphors, San Diego, California, November 14-16, 1995.
  • 1996

  • P. D. Keir and J. F. Wager, "SPICE Modeling of Dynamic Space Charge in Alternating-Current Thin-Film Electroluminescent Devices," Society for Information Display International Symposium, San Diego, CA, May 12-17, 1996.
  • J. F. Wager, "Electroluminescent Phosphors: Point Defects," 8th International Workshop on Electroluminescence, Berlin, Germany August 13-15, 1996.
  • J. Hitt, J. F. Wager, and S. S. Sun "Static Space Charge in Evaporated ZnS:Mn TFEL Devices," 2nd International Conference on the Science and Technology of Display Phosphors, San Diego, California, November 18-20, 1996.
  • 1997

  • D. R. Beck, J. F. Wager, L. Arbuthnot, and T. Flegal, "AMEL Power Considerations," Society for Information Display International Symposium, Boston, MA, May 13-15, 1997.
  • J. Peery, P. D. Keir, W. M. Ang, and J. F. Wager, "Simulation of Evaporated ZnS:Mn ACTFEL Devices," 3rd International Conference on the Science and Technology of Display Phosphors, Huntington Beach, California, November 3-5, 1997.
  • B. A. Cleary, P. D. Keir, J. C. Hitt, T. K. Plant, J. F. Wager, and S. S. Sun, "Photoinduced Charge and Luminescence in Evaporated ZnS:Mn ACTFEL Devices," 3rd International Conference on the Science and Technology of Display Phosphors, Huntington Beach, California, November 3-5, 1997.
  • 1998

  • B. J. Norris, J. P. Bender, and J. F. Wager, "Steady-State Transient Current-Voltage Characterization of OLEDs," 9th International Workshop on Inorganic and Organic Electroluminescence and Fourth International Conference on the Science and Technology of Display Phosphors, Bend, Oregon, September 14-17, 1998.
  • J. P. Bender, B. J. Norris, and J. F. Wager, "OLED Modeling via SPICE," 9th International Workshop on Inorganic and Organic Electroluminescence and Fourth International Conference on the Science and Technology of Display Phosphors, Bend, Oregon, September 14-17, 1998.
  • B. A. Cleary, P. D. Keir, J. C. Hitt, T. K. Plant, J. F. Wager, B. Aitchison, R. T. Tuenge, and S.S. Sun, "Subthreshold Voltage-Induced Transferred Charge Analysis of ZnS:Mn TFEL Devices," 9th International Workshop on Inorganic and Organic Electroluminescence and Fourth International Conference on the Science and Technology of Display Phosphors, Bend, Oregon, September 14-17, 1998.
  • C. A. Nevers, B. A. Cleary, T. K. Plant, J. F. Wager, S. Moehnke, and R. T. Tuenge, "Photo-Induced Charge and Luminescence Measurements of ALE SrS:Ce TFEL Devices," 9th International Workshop on Inorganic and Organic Electroluminescence and Fourth International Conference on the Science and Technology of Display Phosphors, Bend, Oregon, September 14-17, 1998.
  • 1999

  • P. D. Keir, C. Maddix, B. Baukol, J. F. Wager, B. L. Clark, and D. A. Keszler, "A Comparison of the Short Wavelength Performance of ZnS and SrS Thin-Film Electroluminescent Device via a Rare Earth Doping Study," American Vacuum Society 46th International Symposium, Seattle, WA, October 25-29, 1999.
  • B. Norris, J. F. Wager, J. Liu, and Y. Yang, "A Comparison of Organic Light Emitting Devices using Transient Current-Transient Voltage, Transient Brightness-Transient Voltage, and Transient Brightness-Transient Current Analysis," American Vacuum Society 46th International Symposium, Seattle, WA, October 25-29, 1999.
  • J. C. Hitt, and J. F. Wager, "An n-Sheet State-Space RFEL Device," 5th International Conference on the Science and Technology of Display Phosphors, San Diego, CA, November 8-10, 1999.
  • B. Baukol, P. D. Keir, J. C. Hitt, B. L. Clark, D. A. Keszler, and J. F. Wager, "EL Thermal Quenching in SrS:Cu TFEL Devices," 5th International Conference on the Science and Technology of Display Phosphors, San Diego, CA, November 8-10, 1999.
  • B. L. Clark, D. Li, D. A. Keszler, P. D. Keir, and J. F. Wager, "Saturated Green Electroluminescence from SrS TFEL Devices," 5th International Conference on the Science and Technology of Display Phosphors, San Diego, CA, November 8-10, 1999.
  • 2000

  • B. A Baukol, J. F. Wager, and S. Moehnke, "Cu Doping of Atomic Layer Epitaxy SrS via a Rapid Thermal Anneal Process," Society for Information Display International Symposium, Long Beach, CA, May 13-19, 2000.
  • B. A. Baukol, J. F. Wager, J. Ihanus, M. Leskela, and R. Tuenge, "Eu+2-doped ALE SrS and CaS Red TFEL Phosphors," 6th International Conference on the Science and Technology of Display Phosphors, San Diego, CA, November 6-8, 2000.
  • B. L. Clark, D. A. Keszler, J. P. Bender, and J. F. Wager, "Photo- and Electroluminescence in Zinc Germanate and Zinc Silicate Powders and ACTFEL Devices," 6th International Conference on the Science and Technology of Display Phosphors, p. San Diego, CA, November 6-8, 2000.
  • J. P. Bender and J. F. Wager, "ACTFEL Device Modeling via SPICE," 6th International Conference on the Science and Technology of Display Phosphors, San Diego, CA, p. 69-72, November 6-8, 2000.
  • 2001

  • M. K. Jayaraj, A. D. Draeseke, J. Tate, R. L. Hoffman, and J. F. Wager, "Transparent pn Heterojunction Thin Film Diodes," Spring Meeting of the Materials Research Society Symposium Proceedings, San Francisco, CA, April 2001.
  • V. Bondar, S. Popovich, T. Felter, and J. Wager, "Low-temperature technology and physical processes in green thin-film phosphor Zn2GeO4-Mn," Spring Meeting of the Materials Research Society Symposium Proceedings, San Francisco, CA, April 2001.
  • J. P. Bender and J. F. Wager, "ACTFEL Devices with Zn2GeO4:Mn Phosphors," 1st Inernational Conference on the Science and Technology of Emissive Displays and Lighting, San Diego, CA, November 12-14, (2001).
  • H. Q. Chiang, B. A. Baukol, J. C. Hitt, J. P. Bender and J. F. Wager, "A Simple Method for Estimating Space Charge in ACTFEL Devices," 1st Inernational Conference on the Science and Technology of Emissive Displays and Lighting, San Diego, CA, November 12-14, (2001).
  • 2002

  • J. P. Bender, J. F. Wager, S. Park, B. L. Park, and D. A. Keszler, "Inorganic Phosphors and ACTFEL Devices on Flexible Plastic Substrates," 11th International Workshop on Inorganic and Organic Electroluminescence, Ghent, Belgium, September 23-26, 2002.
  • J. F. Wager, J. C. Hitt, B. A. Baukol, J. P. Bender, and D. A. Keszler, "Thin Film Electroluminescent Phosphor Luminescent Impurity Doping Trends," 11th International Workshop on Inorganic and Organic Electroluminescence, Ghent, Belgium, September 23-26, 2002.
  • 2003

  • D. Hong, N. DeHuff, R. L. Hoffman, B. J. Norris, H. Q. Chiang, J. P. Bender, J. T. Anderson,J. F. Wager, D. A. Keszler, "Transparent Transistor Development," MRS Fall Meeting, Boston, MA, Dec. 1-3 (2003).
  • 2004

  • Y.-J. Chang, C. Munsee, J. Anderson, J. F. Wager, D. A. Keszler, G. Herman, and C.-H. Chang, "CdS MISFET fabricated by low temperature solution-based deposition technique," MRS Spring Meeting, 2004.
  • Y.-J. Chang, D.-H. Lee, C.-H. Chang, C. Munsee, J. F. Wager, Greg Herman, J. Anderson, D. A. Keszler, "Growth, Characterization, and Application of Semiconductor Thin Films Deposited by Chemical Bath Deposition," 26th Annual Symposium on Applied Surface Analysis, 15th Annual Symposium of the Pacific Northwest Chapter of the American Vacuum Society, June 15-18, 2004.
  • J. P. Bender and J. F. Wager, "ACTFEL Devices with MgS Phosphor Layers," Electroluminescence Conference 2004 Proceedings, Toronto, Canada, September 20-23, 2004.
  • J. P. Bender and J. F. Wager, "Improved Aging and Luminance of Zn2GeO4:Mn ACTFEL Devices with BTO Insulator Layers," 12th International Workshop on Inorganic and Organic Electroluminescence, Toronto, Canada, September 20-23, 2004.
  • 2005

  • D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, "Zinc Tin Oxide-Based Transparent Thin-Film Transistors," in "Materials for Transparent Electronics," MRS Fall Meeting, Boston, MA, November 28 - December 2, 2005.
  • H. Q. Chiang, N. L. Dehuff, D. Hong, E. S. Kettenring, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, "Amorphous Zinc Indium Oxide for Transparent Thin-Film Transistors," in "Materials for Transparent Electronics," MRS Fall Meeting, Boston, MA, November 28 - December 2, 2005.
  • 2006

  • H. Q. Chiang, R. E. Presley, D. Hong, C. M. Hung, J. F. Wager, and R. L. Hoffman, "Transparent Electronics: Inverters and Ring Oscillators," in "Advances in Transparent Electronics: from Materials to Devices," European Materials Research Spring Meeting & the International Conference on Electronic Materials (ICEM), May 29 - June 2, 2006.
  • D. Hong, H. Q. Chiang, R. E. Presley, N. L. Dehuff, J. P. Bender, J. F. Wager, C. H. Park, and D. A. Keszler, "Materials Exploration for Wide Band Gap Thin-Film Transistors via Sequential Layering Method of Binary Compounds," in "Advances in Transparent Electronics: from Materials to Devices," European Materials Research Spring Meeting & the International Conference on Electronic Materials (ICEM), May 29 - June 2, 2006.
  • 2007

  • Brian R. McFarlane, Hai Q. Chiang, David Hong, Rick Presley, and John F. Wager, Poster Paper: "Processing effects on the stability of amorphous indium gallium zinc oxide thin film transistors," 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge, CO, August 19-24, (2007).
  • David Hong, Hai Q. Chiang, Stephen T. Meyers, Jeremy T. Anderson, Douglas A. Keszler, John F. Wager, Poster Paper: "Zinc Tin Oxide Based Thin-Film Transistors," 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge, CO, August 19-24, (2007).
  • P. T. Erslev, H. Q. Chiang, D Hong, J. F. Wager, and J. D. Cohen, Oral Paper: "Determining the electronic properties of amorphous zinc tin oxide (ZnSnO3) films within transparent MIS devices by junction capacitance methods," 22nd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22), Breckenridge, CO, August 19-24, (2007).
  • 2008

  • J. F. Wager, "Electroluminescent phosphor assessment," Proceedings of the 14th International Conference on Inorganic and Organic Electroluminescence, Tivoli, Italy, September 9-12 (2008).
  • K. Hoshino, D. Hong, H. Q. Chiang, and J. F. Wager, "Stability and temperaturedependence of indium gallium zinc oxide thin-film transistors," MRS Fall Meeting, Boston, MA, December 1-5, 2008.
  • P. T. Erslev, D. Hong, J. F. Wager, and J. D. Cohen, "Interface properties of ZTO and IGZO metal-insulator-semiconductor devices," MRS Fall Meeting, Boston, MA, December 1-5, 2008.
  • E. S. Sundholm, B. McFarlane, P. Kurahashi, R. Presley, D. Heineck, and J. F. Wager, "Amorphous oxide semiconductor circuits," MRS Fall Meeting, Boston, MA, December 1-5, 2008.
  • 2010

  • N. Alimardani, J. F. Conley, Jr., E. W. Cowell III, J. F. Wager, M. Chin, S. Kilpatrick, M. Dubey, "Stability and Bias Stressing of Metal/Insulator/Metal Diodes," 2010 IEEE International Integrated Reliability Workshop, Fallen Leaf Lake, CA, October 17 – 21, 2010.
  • 2011

  • T. Waggoner, J. Triska, K. Hoshino, J. F. Conley, Jr., J. F. Wager, "Zirconium Aluminum Oxide Nanolaminate Gate Dielectrics for Amorphous Oxide Semiconductor Thin Film Transistors," 38th Conference on the Physics and Chemistry of Surfaces and Interfaces, San Diego, CA, January 16-20, 2011.

Patents

  • D. Keszler, D. Li, J. F. Wager, B. L. Clark, P. Keir, "Phosphor system," United States patent number: 6,419,855; Filing date: September 16, 1999;
Issue date: Jul.y 16, 2002.
  • J. F. Wager and D. A. Keszler, "Novel Materials for Polycrystalline Thin-Film Solar Cell Applications," Application number: 10/517,728;
Publication number: US 2005/0151131 A1;
Filing date: June 10, 2003.
  • H. Q. Chiang, J. F. Wager, and R. L. Hoffman, "Transparent Thin-Film Transistor with a Zinc Tin Oxide Channel Layer," OSU invention disclosure filed (2003).
  • H. Q. Chiang, R. L. Hoffman, N. L. DeHuff, D. Hong, and J. F. Wager, "Transparent Thin-Film Transistor with a Zinc Indium Oxide Channel Layer," OSU invention disclosure filed (2003).
  • R. L. Hoffman, J. F. Wager D. Hong, and H. Q. Chiang, "Passivation of oxide semiconductor channel thin-film transistors," OSU invention disclosure filed (2004).
  • Randy Hoffman, Hai Chiang, John Wager, "Semiconductor Device," Application number: 10/763,353; Publication number: US 2005/0017244 A1; Filing date: January 23, 2004.
  • J. F. Wager and S. H. Linn, "Photoconductor for Spatial Light Modulator Applications," OSU invention disclosure filed (2005).
  • H. Q. Chiang, D. Hong, J. F. Wager, and D. A. Keszler, "Copper Zinc Oxide for p-channel Thin-Film Transistor Applications," OSU invention disclosure filed (2006).
  • R. L. Hoffman and J. F. Wager, "Transistor Device having a Delafossite Material," United States patent number: 7,026,713; Filing date: December 17, 2003;
Issue date: April 11, 2006.
  • J. F. Wager and D. Hong, "Amorphous multi-component oxide insulators for oxide electronics thin-film transistor gate applications," OSU invention disclosure (2007).
  • H. Q. Chiang, R. L. Hoffman, N. L. DeHuff, D. Hong, and J. F. Wager, "Semiconductor Device," United States patent number: 7,145,174; Filing date: Mar 12, 2004; December 5, (2006).
  • J. F. Wager, and R. L. Hoffman, "Transistor structures having a transparent channel," United States patent number: 7,189,992; Filing date: November 27, 2002;
Issue date: March 13, 2007.
  • E. William Cowell III, John F. Wager III, Brady Gibbons, Douglas A. Keszler, "Amorphous Multi-component Metallic Thin Films for Electronic Device and MEMS Applications," OSU invention disclosure filed (2008).
  • J. F. Wager, and R. L. Hoffman, "Transistor structures," United States patent number: 7,339,187; Filing date: January 24, 2003;
Issue date: March 4, 2008.
  • Randy Hoffman, John Wager, David Hong, Hai Chiang, "Method to form a passivation layer," United States patent number: 7,382,421;
Filing date: October 12, 2004;
Issue date: June 3, 2008.
  • Hai Q. Chiang, Randy L. Hoffman, David Hong, Nicole L. Dehuff, and John F. Wager, "A semiconductor device can include a channel including a zinc-indium oxide film," United States patent number: 7,629,191;
Filing date: September 26, 2006;
Issue date: December 8, 2009.
  • J. F. Wager, D. A. Keszler, R. E. Presley, and E. S. Sundholm, "Amorphous Materials for Oxide Electronics," OSU invention disclosure filed (2009).
  • R. E. Presley, C. Knutson, D. A. Keszler, J. F. Wager, and R. L. Hoffman, "Multicomponent Oxide Passivation Materials for Oxide Semiconductor Thin-Film Transistors," OSU/HP invention disclosure filed (2010).
  • E. William Cowell III, John F. Wager III, Brady Gibbons, Douglas A. Keszler, "Amorphous multi-component metallic thin films for electronic devices," U.S. Pat. Appl. Publ. US20100777194 20100510 (2010).

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