OREGON STATE UNIVERSITY

You are here

A 475 mV, 4.9 GHz enhanced swing differential Colpitts VCO in 130 nm CMOS with an FoM of 196.2 dBc/Hz

TitleA 475 mV, 4.9 GHz enhanced swing differential Colpitts VCO in 130 nm CMOS with an FoM of 196.2 dBc/Hz
Publication TypeConference Paper
Year of Publication2010
AuthorsFarhabakhshian, F., T. Brown, K. Mayaram, and T. S. Fiez
Conference Name2010 IEEE Custom Integrated Circuits Conference -CICC 2010IEEE Custom Integrated Circuits Conference 2010
Pagination1 - 4
Date Published09/2010
PublisherIEEE
Conference LocationSan Jose, CA
ISBN Number978-1-4244-5758-8
Abstract

An enhanced swing differential Colpitts VCO operates as low as 400 mV and enables oscillations to go beyond both the supply voltage and ground. Operating at 475 mV, the 4.9 GHz VCO consumes 2.7 mW. The 130 nm CMOS VCO's measured phase noise is -136.2 dBc/Hz at a 3 MHz offset frequency. The resulting FoM of 196.2 dBc/Hz makes it the highest performing integrated LC oscillator published to date.

DOI10.1109/CICC.2010.5617435