OREGON STATE UNIVERSITY

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Comparison of supply noise and substrate noise reduction in SiGe BiCMOS and FDSOI processes

TitleComparison of supply noise and substrate noise reduction in SiGe BiCMOS and FDSOI processes
Publication TypeConference Paper
Year of Publication2009
AuthorsCheong, W L., B. E. Owens, H E. Pham, C. Hanken, J. Le, T. S. Fiez, and K. Mayaram
Conference Name2009 10th International Symposium on Quality of Electronic Design (ISQED)
Pagination112 - 115
Date Published03/2009
PublisherIEEE
Conference LocationSan Jose, CA
ISBN Number978-1-4244-2952-3
Keywordsnoise reduction, SiGe BiCMOS, SOI, substrate noise, substrate noise comparison
Abstract

In this paper, substrate noise suppression for 0.18 mum SiGe BiCMOS and fully-depleted silicon on insulator (FDSOI) processes is evaluated and compared. For both technologies, the most effective way for substrate noise reduction is assessed to identify the best approach for noise mitigation. The results show that the FDSOI process with large separation between analog and digital blocks is a more efficient substrate crosstalk suppression method compared to the best case in the SIGe BiCMOS process.

DOI10.1109/ISQED.2009.4810279