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Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers

TitleImpact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers
Publication TypeJournal Article
Year of Publication2012
AuthorsAlimardani, N., W. E. Cowell, J. F. Wager, J. F. Conley, D. R. Evans, M. Chin, S. J. Kilpatrick, and M. Dubey
JournalJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Volume30
Issue1
Pagination01A113
Date Published01/2012
ISSN07342101
Abstract

Metal-insulator-metal (MIM) tunnel diodes on a variety of high and low work function metals with various levels of root-mean-square roughness are fabricated using high quality atomic layer deposited Al₂O₃ as the insulating tunnel barrier. It is found that electrode surface roughness can dominate the current versus voltage characteristics of MIM diodes, even overwhelming the impact of metal work function. Devices with smoother bottom electrodes are found to produce current versus voltage behavior with higher asymmetry and better agreement with Fowler-Nordheim tunneling theory, as well as a greater percentage of functioning devices.

DOI10.1116/1.3658380
Short TitleJ. Vac. Sci. Technol. A