|Title||Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers |
|Publication Type||Journal Article |
|Year of Publication||2012 |
|Authors||Alimardani, N., W. E. Cowell, J. F. Wager, J. F. Conley, D. R. Evans, M. Chin, S. J. Kilpatrick, and M. Dubey |
|Journal||Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
|Date Published||01/2012 |
Metal-insulator-metal (MIM) tunnel diodes on a variety of high and low work function metals with various levels of root-mean-square roughness are fabricated using high quality atomic layer deposited Al₂O₃ as the insulating tunnel barrier. It is found that electrode surface roughness can dominate the current versus voltage characteristics of MIM diodes, even overwhelming the impact of metal work function. Devices with smoother bottom electrodes are found to produce current versus voltage behavior with higher asymmetry and better agreement with Fowler-Nordheim tunneling theory, as well as a greater percentage of functioning devices.
|Short Title||J. Vac. Sci. Technol. A |