Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors

TitleZirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
Publication TypeJournal Article
Year of Publication2011
AuthorsWaggoner, T., J. Triska, K. Hoshino, J. F. Wager, and J. F. Conley
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume29
Issue4
Pagination04D115
Date Published07/2011
ISSN10711023
Keywordsalumina, atomic layer deposition, gallium compounds, indium compounds, laminates, nanocomposites, nanofabrication, semiconductor materials, semiconductor thin films, thin film transistors, tin compounds, zinc compounds, zirconium compounds
Abstract

The dielectric properties of ZrO₂–Al₂O₃ nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors (TFTs) are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved performance and stability compared to single layer gate dielectrics. It is also found that TFT performance and stability are influenced not only by the chemical composition of the gate dielectric/channel interface but also by the thickness and composition of the laminate layers in the dielectric near the interface.

DOI10.1116/1.3609254
Short TitleJ. Vac. Sci. Technol. B