Transfer-curve assessment of oxide thin-film transistors

TitleTransfer-curve assessment of oxide thin-film transistors
Publication TypeJournal Article
Year of Publication2010
AuthorsWager, J. F.
JournalJournal of the Society for Information Display
Volume18
Issue10
Pagination749–752
Date Published10/2010
ISSN10710922
Keywordselectron traping, hysteresis, mobility, oxide electronics, thin-film electronics, transfer curves
Abstract

Oxide electronics is an emerging area that is well positioned to strongly and positively impact next-generation display technology. A metal-oxide thin-film transistor (TFT) is the fundamental component of oxide electronics. Unfortunately, some of the claims made in the literature about the performance of oxide TFTs are, in this author's opinion, unreliable. This is true of turn-on voltage, subthreshold swing, and, especially, channel mobility. Measurement artifacts can lead to unreliable performance estimates. The goal of this contribution is to enumerate some of these artifacts and to outline a general testing procedure for avoiding common oxide-TFT assessment pitfalls.

DOI10.1889/JSID18.10.749
Short TitleJ. Soc. Inf. Display