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Stability and bias stressing of metal/insulator/metal diodes

TitleStability and bias stressing of metal/insulator/metal diodes
Publication TypeConference Paper
Year of Publication2010
AuthorsAlimardani, N., J. F. Conley, E. W. Cowell, J. F. Wager, M. Chin, S. Kilpatrick, and M. Dubey
Conference Name2010 IEEE International Integrated Reliability Workshop (IIRW)
Pagination80 - 84
Date Published10/2010
PublisherIEEE
Conference LocationS. Lake Tahoe, CA
ISBN Number978-1-4244-8521-5
Abstract

The performance and stability of metal/insulator/metal tunnel diodes was investigated as a function of interfacial roughness using Al, Ir, Pt, and ultra-smooth amorphous multi-metal (ZrCuAlNi) bottom electrodes with uniform Al₂O₃ tunnel dielectrics deposited via atomic layer deposition. Current density versus field behavior and device yield were found to be a function of interfacial roughness with smoother electrodes exhibiting more ideal behavior and higher percentages of working devices. A preliminary investigation of DC bias stressed devices suggests that interfacial roughness plays a large role in stability and reliability as well.

DOI10.1109/IIRW.2010.5706491