OREGON STATE UNIVERSITY

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Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes

TitleSensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes
Publication TypeJournal Article
Year of Publication2010
AuthorsJander, A., and P. Dhagat
JournalSolid-State Electronics
Volume54
Issue11
Pagination1479 - 1484
Date Published11/2010
ISSN00381101
Keywordselectrically detected magnetic resonance, magnetometer, sensor, spin-dependent recombination
Abstract

An analysis of the magnetic field sensitivity that could be achieved in a sensor utilizing spin-dependent recombination (SDR) in silicon diodes is presented. Based on current theories of spin-dependent recombination and shot noise in diodes it is predicted that conventional silicon diodes may be used as detectors in a resonant magnetic field sensors with better than 3 μT resolution in a 1 Hz bandwidth – adequate for applications such as compassing, current sensing, position sensors and non-contact switches. A semiconductor device optimized for maximum SDR response will theoretically achieve a resolution on the order of 1 nT.

DOI10.1016/j.sse.2010.06.002
Short TitleSolid-State Electronics