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A SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications

TitleA SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications
Publication TypeConference Paper
Year of Publication2010
AuthorsValdes-Garcia, A., S. Nicolson, J-W. Lai, A. Natarajan, P-Y. Chen, S. Reynolds, J-H C. Zhan, and B. Floyd
Conference NameIEEE International Solid- State Circuits Conference - (ISSCC)
Pagination218 - 219
Date Published02/2010
PublisherIEEE
Conference LocationSan Francisco, CA
ISBN Number978-1-4244-6033-5
Abstract

A 60 GHz phased-array transmitter for multi-Gb/s non-line-of-sight links is fully integrated in a 0.12 ¿m SiGe BiCMOS process. It consists of an up-conversion chain with synthesizer, a power distribution tree and 16 phase-shifting front-ends. The IC occupies 44 mm², draws 1.2 W excluding front-ends, and delivers 9 to 13.5 dBm OP1dB per element drawing 164 to 313 mW per front-end.

DOI10.1109/ISSCC.2010.5433956