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60GHz passive and active RF-path phase shifters in silicon

Title60GHz passive and active RF-path phase shifters in silicon
Publication TypeConference Paper
Year of Publication2009
AuthorsTsai, M-D., and A. Natarajan
Conference NameIEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Pagination223 - 226
Date Published06/2009
PublisherIEEE
Conference LocationBoston, MA
ISBN Number978-1-4244-3377-3
Keywordsmm-wave, phase shifter, phased-array
Abstract

Integrated 60-GHz active and passive phase shifters for RF-path phase-shifting phased array transceivers are demonstrated in this paper. The reflection-type passive phase shifter achieves >180deg phase variation across the 57 GHz-64 GHz band with insertion loss varying from 4.2 dB-7.5 dB at 60 GHz. The active phase shifter employs vector-interpolation architecture and achieves 360deg phase variation, -2 dB gain, 12 GHz 3 dB bandwidth and 16.5 dB noise figure at 60 GHz. Measurements over process and temperature are also discussed and comparisons are drawn between active and passive phase shifting approach for 60 GHz phased arrays.

DOI10.1109/RFIC.2009.5135527