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Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer

TitlePassivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer
Publication TypeJournal Article
Year of Publication2012
AuthorsSundholm, E. S., R. E. Presley, K. Hoshino, C. C. Knutson, R. L. Hoffman, D. A. Mourey, D. A. Keszler, and J. F. Wager
JournalIEEE Electron Device Letters
Volume33
Issue6
Pagination836 - 838
Date Published06/2012
ISSN1558-0563
Abstract

Sputter-deposited amorphous zinc-tin-silicon-oxide (ZTSO) is demonstrated to be a viable electronic passivation layer for bottom-gate thin-film transistors (TFTs) with amorphous zinc-tin-oxide and indium-gallium-zinc-oxide channels. ZTSO allows for successful passivation of these semiconductors without significant changes in turn-on voltage, hysteresis, or channel mobility that is commonly associated with unsuccessful passivation of amorphous oxide semiconductors (AOSs). Passivation of AOS TFTs using ZTSO significantly increases electrical stability under negative-bias illumination stress testing conditions compared with unpassivated AOS TFTs. ZTSO also acts as a barrier layer allowing for additional postprocessing (e.g., plasma-enhanced chemical vapor deposition processes) that in some cases can negatively effect an unprotected AOS layer.

DOI10.1109/LED.2012.2191530
Short TitleIEEE Electron Device Lett.