p-n junctions in silicon nanowires

Titlep-n junctions in silicon nanowires
Publication TypeJournal Article
Year of Publication2006
AuthorsGoncher, G., R. Solanki, J. R. Carruthers, J. F. Conley, and Y. Ono
JournalJournal of Electronic Materials
Pagination1509 - 1512
Date Published07/2006

Silicon nanowires composed of p-n junctions have been grown on 2 × 5 cm glass substrates with a thin layer of indium tin oxide (ITO). These nanowires were grown both directly on ITO utilizing the vapor-solid (VS) method, as well as by vapor-liquid-solid (VLS) method, with a thin layer of gold as a catalyst. Current-voltage analyses show p-n diode characteristics in both cases. When a reverse dc bias was applied, these diodes responded to optical signals incident on the glass surface, showing potential solar-cell application and intriguing possibilities for future optical detection structures. Devices grown via the VS method displayed better electrical properties compared to those produced via the VLS method.

Short TitleJournal of Elec Materi