p-n junctions in silicon nanowires

Titlep-n junctions in silicon nanowires
Publication TypeJournal Article
Year of Publication2006
AuthorsGoncher, G., R. Solanki, J. R. Carruthers, J. F. Conley, and Y. Ono
JournalJournal of Electronic Materials
Volume35
Issue7
Pagination1509 - 1512
Date Published07/2006
ISSN1543-186X
Abstract

Silicon nanowires composed of p-n junctions have been grown on 2 × 5 cm glass substrates with a thin layer of indium tin oxide (ITO). These nanowires were grown both directly on ITO utilizing the vapor-solid (VS) method, as well as by vapor-liquid-solid (VLS) method, with a thin layer of gold as a catalyst. Current-voltage analyses show p-n diode characteristics in both cases. When a reverse dc bias was applied, these diodes responded to optical signals incident on the glass surface, showing potential solar-cell application and intriguing possibilities for future optical detection structures. Devices grown via the VS method displayed better electrical properties compared to those produced via the VLS method.

DOI10.1007/s11664-006-0140-y
Short TitleJournal of Elec Materi