NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors

TitleNbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors
Publication TypeJournal Article
Year of Publication2004
AuthorsGao, W., J. F. Conley, and Y. Ono
JournalApplied Physics Letters
Volume84
Issue23
Pagination4666
Date Published06/2004
ISSN00036951
Abstract

Niobium mono-oxide (NbO) is investigated as a potential candidate for gate electrode to replace poly-silicon gate in metal-oxide-semiconductor field-effect transistors. NbO was found to have a work function of 4.18±0.05 eV on SiO₂ and to be stable up to 1000 °C with SiO₂ and HfO₂ gate dielectrics. The low work function and high stability make NbO suitable for n-channel metal-oxide-semiconductor field-effect transistors devices. The method of deposition is critical during the fabrication to minimize the incorporation of Nb, NbO₂, and Nb₂O₅ which are detrimental to the stability and conductivity of the gate electrode and extra care is needed to avoid further oxidation of NbO.

DOI10.1063/1.1759780
Short TitleAppl. Phys. Lett.