Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

TitleElectron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si
Publication TypeJournal Article
Year of Publication2003
AuthorsKang, A. Y., P. M. Lenahan, and J. F. Conley
JournalApplied Physics Letters
Volume83
Issue16
Pagination3407-3409
Date Published10/2003
ISSN00036951
Abstract

We observed two paramagnetic defects in thin films of HfO₂ on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O₂⁻ defect. A second spectrum is likely due to an Hf⁺³ related defect.

DOI10.1063/1.1621078
Short TitleAppl. Phys. Lett.