OREGON STATE UNIVERSITY

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Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O

TitleElectrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O
Publication TypeJournal Article
Year of Publication2003
AuthorsConley, J. F., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang
JournalApplied Physics Letters
Volume82
Issue20
Pagination3508-3510
Date Published05/2003
ISSN00036951
Abstract

We report on the electrical properties of HfO&#8322; deposited via atomic layer deposition using Hf(NO&#8323;)&#8324; precursor for metal/oxide/semiconductor gate dielectric applications. Thin films, with less than 1% variation in accumulation capacitance over a 150 mm wafer, have been deposited directly on hydrogen-terminated Si wafers. The effective dielectric constant of thin (<10 nm) films was in the range of κ<sub>eff</sub> = 10–12, the breakdown voltage was about 6–9 MV/cm, and the leakage current was between 3–6 orders of magnitude lower than that of SiO&#8322;. The relative benefit of lower leakage current of HfO&#8322; over SiO&#8322; decreased with decreasing effective thickness. Electron trapping was observed under constant voltage stressing.

DOI10.1063/1.1575934
Short TitleAppl. Phys. Lett.