Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

TitleElectron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si
Publication TypeJournal Article
Year of Publication2002
AuthorsKang, A. Y., P. M. Lenahan, J. F. Conley, and R. Solanki
JournalApplied Physics Letters
Volume81
Issue6
Pagination1128-1130
Date Published08/2002
ISSN00036951
Abstract

We report electron spin resonance (ESR) observation of interface defects at the HfO₂/(111)Si boundary for HfO₂ films deposited via atomic layer chemical vapor deposition using Hf(NO₃)₄ as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO₂ interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO₂/Si interface traps.

DOI10.1063/1.1494123
Short TitleAppl. Phys. Lett.