|Title||Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation |
|Publication Type||Journal Article |
|Year of Publication||2002 |
|Authors||Suehle, J. S., E. M. Vogel, P. Roitman, J. F. Conley, A. H. Johnston, B. Wang, J. B. Bernstein, and C. E. Weintraub |
|Journal||Applied Physics Letters |
|Date Published||02/2002 |
Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO₂ films subjected to ⁶⁰Co gamma irradiation and heavy ions of 823 MeV ¹²⁹Xe (linear energy transfer = 59 MeV-cm²/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.
|Short Title||Appl. Phys. Lett. |