OREGON STATE UNIVERSITY

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Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

TitleObservation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation
Publication TypeJournal Article
Year of Publication2002
AuthorsSuehle, J. S., E. M. Vogel, P. Roitman, J. F. Conley, A. H. Johnston, B. Wang, J. B. Bernstein, and C. E. Weintraub
JournalApplied Physics Letters
Volume80
Issue7
Pagination1282-1284
Date Published02/2002
ISSN00036951
Abstract

Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO₂ films subjected to ⁶⁰Co gamma irradiation and heavy ions of 823 MeV ¹²⁹Xe (linear energy transfer = 59 MeV-cm²/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence.

DOI10.1063/1.1448859
Short TitleAppl. Phys. Lett.