Degradation mechanisms in SOI n-channel LDMOSFETs

TitleDegradation mechanisms in SOI n-channel LDMOSFETs
Publication TypeJournal Article
Year of Publication2001
AuthorsVandooren, A., J. F. Conley, S. Cristoloveanu, M. Mojarradi, and E. Kolawa
JournalMicroelectronic Engineering
Pagination489 - 495
Date Published11/2001

The back-gate bias modifies the series resistance and the overall performance of LDMOSFETs in linear and saturation operation. The influence of the back-gate under degradation conditions is investigated. Degradations due to irradiation, hot carrier injection, and low temperature are complex and differ from the case of low-voltage CMOS transistors. The degradation mechanisms are clearly identified and the main parameters are extracted using the model of the LDMOS in linear operation.

Short TitleMicroelectronic Engineering