OREGON STATE UNIVERSITY

You are here

Defects and nanocrystals generated by Si implantation into a-SiO/sub 2/

TitleDefects and nanocrystals generated by Si implantation into a-SiO/sub 2/
Publication TypeJournal Article
Year of Publication2000
AuthorsNicklaw, C. J., M. P. Pagey, S. T. Pantelides, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, J. E. Wittig, B. M. Howard, E. Taw, W. H. McNeil, and J. F. Conley
JournalIEEE Transactions on Nuclear Science
Volume47
Issue6
Pagination2269 - 2275
Date Published12/2000
ISSN00189499
Abstract

Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possible defect structures associated with excess Si in thermal oxides.

DOI10.1109/23.903764
Short TitleIEEE Trans. Nucl. Sci.