Instabilities in oxide semiconductor transparent thin film transistors

TitleInstabilities in oxide semiconductor transparent thin film transistors
Publication TypeConference Paper
Year of Publication2009
AuthorsConley, J. F.
Conference Name2009 IEEE International Integrated Reliability Workshop (IRW)
Pagination50 - 55
Date Published10/2009
PublisherIEEE
Conference LocationSouth Lake Tahoe, CA
ISBN Number978-1-4244-3921-8
Abstract

New amorphous oxide semiconductor transparent thin film transistors (TTFTs) exhibit good mobility (5 to >50 cm²/V-sec), are transparent, and can be processed at low temperatures. They show great promise for high performance large area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for OLED displays. An overview of TFT operation, expected reliability concerns, and an up to date review of recently emerging work on the stability of these devices will be presented.

DOI10.1109/IRWS.2009.5383033