Defects in HfO2 Based Dielectric Gate Stacks

TitleDefects in HfO2 Based Dielectric Gate Stacks
Publication TypeJournal Article
Year of Publication2009
AuthorsLenahan, P. M., J. T. Ryan, C. J. Cochrane, and J. F. Conley
JournalMRS Proceedings
Volume1155
Pagination1-6
Date Published01/2009
Abstract

We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO₂ based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO₂ based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO₂ and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO₂ based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

DOI10.1557/PROC-1155-C12-01
Short TitleMRS Proc.