A low temperature method for uniform growth of In₂O₃ nanostructures on Si wafers that does not require separate catalyst materials or template-assistance is investigated. Nanostructures are uniformly deposited on either bare or SiO₂ thin film coated Si substrates via DC magnetron sputtering at 200-400°C using a 90% In₂O₃ / 10% SnO₂ (ITO) target. The nanostructures are approximately 500 nm long, sit atop an accompanying underlying 100 nm conductive film, and are conically shaped, with a diameter of about 80 nm at the base, tapering to a point that is capped with a spherical “ball”. X-ray diffraction (XRD) indicates a cubic In₂O₃ phase. Field emission from the tips is observed at a base pressure of 10-8 Torr with turn-on fields in a range between 45-75 V/cm and threshold fields from 64-105 V/cm. Nanocone growth is investigated with respect to O₂ and Ar flow rates, temperature, power, pressure, wafer rotation, and time.