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Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization

TitleOzone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization
Publication TypeJournal Article
Year of Publication2004
AuthorsSenzaki, Y., S. Park, D. Tweet, J. F. Conley, and Y. Ono
JournalMRS Proceedings
Date Published01/2004

New ALD processes for hafnium silicate films have been developed at Aviza Technology by co-injection of tetrakis(ethylmethylamino)hafnium and tetrakis(ethylmethylamino)silicon precursors. Alternating pulses of the Hf/Si precursor vapor mixture and ozone allow process temperatures below 400°C to grow Hf&#8339;Si&#8321;&#8331;&#8339;O&#8322; films. Film characterization, including film density, crystallinity, and thermal anneal effect, was performed on five 20 nm thick Hf&#8339;Si&#8321;&#8331;&#8339;O&#8322; films where x = 0.2, 0.4, 0.6, 0.8, 1.0. X-ray measurements revealed the film densities and thicknesses for the as-deposited and 1000°C annealed samples. The densification with anneals seen in the optical measurements were confirmed. The as-deposited amorphous HfO&#8322; and Hf<sub>0.8</sub>Si<sub>0.2</sub>O&#8322; were crystallized after a 600°C anneal. The HfO&#8322; formed the well known monoclinic phase while the silicate formed a face-centered-cubic (fcc) structure. This fcc phase has only recently been mentioned in the literature [1].

Short TitleMRS Proc.