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Reliability Concerns for HfO2/Si (and ZrO2/Si) Systems: Interface and Dielectric Traps

TitleReliability Concerns for HfO2/Si (and ZrO2/Si) Systems: Interface and Dielectric Traps
Publication TypeConference Paper
Year of Publication2003
AuthorsKang, A. Y., P. M. Lenahan, J. F. Conley, and Y. Ono
Conference NameIEEE 2003 International Integrated Reliability Workshop (IRW)
Pagination24 - 27
Date Published10/2003
PublisherIEEE
Conference LocationLake Tahoe, CA
Abstract

We report on electron photo-injection results in HfO₂ films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O₋₂2 superoxide ions. Another center, likely a Hf⁺³ center, is also observed.

DOI10.1109/IRWS.2003.1283294