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Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor

TitleAtomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor
Publication TypeJournal Article
Year of Publication2002
AuthorsConley, J. F., Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki
JournalMRS Proceedings
Volume716
Pagination73-78
Date Published01/2002
ISSNnull
Abstract

HfO&#8322; films have been deposited using anhydrous hafnium nitrate (Hf(NO&#8323;)&#8324;) as a precursor for atomic layer chemical vapor deposition (ALCVD). These films have been characterized using x-ray diffraction, x-ray reflectivity, atomic force microscopy, current vs. voltage, and capacitance vs. voltage measurements. An advantage of this precursor is that it produces smooth and uniform initiation of film deposition on H-terminated silicon surfaces. As deposited films remained amorphous at temperatures below ∼700°C. The effective dielectric constant of the film (neglecting quantum effects) for films less than ∼15 nm thick, was in the range of k<sub>film</sub> ∼ 10-11, while the HfO&#8322; layer value was estimated to be kHfO&#8322; ∼ 12-14. The lower than expected dielectric constant of the film stack is due in part to the presence of an interfacial layer such as HfSiO&#8339;. Excess oxygen may play a role in the lower than expected dielectric constant of the HfO&#8322; layer. Breakdown of HfO&#8322; films occurred at ∼5-7 MV/cm. Leakage current was lower than that of SiO&#8322; films of comparable equivalent thickness.

URLhttp://journals.cambridge.org/article_S1946427400124698
DOI10.1557/PROC-716-B2.2