AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

TitleAC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors
Publication TypeJournal Article
Year of Publication2010
AuthorsMcFarlane, B. R., P. Kurahashi, D. P. Heineck, R. E. Presley, E. S. Sundholm, and J. F. Wager
JournalIEEE Electron Device Letters
Pagination314 - 316
Date Published04/2010
Keywordsamorphous semiconductors, rectifier, thin-film transistors

Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 Vrms at a frequency of 1 MHz, output voltages of ∼9 and∼10.5 V, respectively, are observed. With a channel length of 15 μm, successful operation up to 20 MHz is demonstrated.

Short TitleIEEE Electron Device Lett.