OREGON STATE UNIVERSITY

You are here

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

TitleMapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide
Publication TypeJournal Article
Year of Publication2009
AuthorsErslev, P. T., E. S. Sundholm, R. E. Presley, D. Hong, J. F. Wager, and D. J. Cohen
JournalApplied Physics Letters
Volume95
Issue19
Pagination192115
Date Published2009
ISSN00036951
Abstract

Amorphous zinc tin oxide (ZTO) is a wide-band-gap (transparent) semiconductor which exhibits high electron mobilities irrespective of its disordered nature. Transient photocapacitance (TPC), drive level capacitance profiling (DLCP), and modulated photocurrent spectroscopy (MPC) were used to determine the electronic state distribution within the mobility gap of ZTO. Conduction band-tail and valence band-tail Urbach energies near 10 and 110 meV were obtained by MPC and TPC, respectively. DLCP indicated free carrier densities in the mid-10¹⁵ cm-³ range plus a 0.2eV wide band of defects 0.4eV from the conduction band. The MPC spectra for ZTO also disclosed a defect band near the conduction band-tail.

DOI10.1063/1.3262962
Short TitleAppl. Phys. Lett.