Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter

TitleZinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter
Publication TypeJournal Article
Year of Publication2009
AuthorsHeineck, D. P., B. R. McFarlane, and J. F. Wager
JournalIEEE Electron Device Letters
Pagination514 - 516
Date Published05/2009
Keywordsamorphous oxide semiconductor (AOS), enhancement/depletion (E/D) inverter, oxide electronics, thin-film transistors, zinc tin oxide (ZTO)

A fabrication process to create a zinc tin oxide (ZTO) thin-film-transistor (TFT) enhancement/depletion inverter using 15-μm channel lengths is developed. Both enhancement- and depletion-mode staggered bottom-gate ZTO TFTs are simultaneously fabricated on a single substrate using a single sputter target and postdeposition anneal step. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V.

Short TitleIEEE Electron Device Lett.