OREGON STATE UNIVERSITY

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Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer

TitleThin-film transistors with transparent amorphous zinc indium tin oxide channel layer
Publication TypeJournal Article
Year of Publication2007
AuthorsGrover, M. S., P. A. Hersh, H. Q. Chiang, E. S. Kettenring, J. F. Wager, and D. A. Keszler
JournalJournal of Physics D: Applied Physics
Volume40
Issue5
Pagination1335 - 1338
Date Published03/2007
ISSN1361-6463
Abstract

Thin-film transistors (TFTs) with transparent amorphous zinc indium tin oxide (ZITO) channel layer are demonstrated. Optical transmission of the channel layer is approximately 85% in the visible portion of the electromagnetic spectrum. The channel layer is formed via rf magnetron sputter deposition and then furnace annealed in air. Peak incremental mobilities of 5–19 cm² V-¹ s-¹ and turn-on voltages of −4 to −17 V are obtained for devices annealed post-deposition at 100–300 °C, respectively. Current–voltage measurements indicate n-channel, depletion-mode transistor operation with excellent drain current saturation and a drain current on-to-off ratio greater than 10^6. ZITO is one example of an emerging class of high performance TFT channel materials involving transparent amorphous multicomponent oxides composed of heavy-metal cations with (n − 1)d¹⁰ns⁰(n ≥ 4) electronic configuration.

DOI10.1088/0022-3727/40/5/004
Short TitleJ. Phys. D: Appl. Phys.