OREGON STATE UNIVERSITY

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Zinc tin oxide thin-film transistors via reactive sputtering using a metal target

TitleZinc tin oxide thin-film transistors via reactive sputtering using a metal target
Publication TypeJournal Article
Year of Publication2006
AuthorsHong, D., H. Q. Chiang, and J. F. Wager
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume24
Issue5
PaginationL23
Date Published2006
ISSN10711023
Keywordsannealing, semiconductor growth, semiconductor thin films, sputter deposition, thin film transistors, wide band gap semiconductors, zinc compounds
Abstract

Zinc tin oxide based thin-film transistors are fabricated via reactive magnetron sputtering using a
metallic zinc/tin alloy target. The oxygen partial pressure and total sputtering pressure are explored. An oxygen partial pressure and total sputtering pressure of 0.8 and 30 mTorr, respectively, are found to be optimal. Devices with a reactively sputtered zinc tin oxide channel layer and channel layer annealing of 500 °C exhibit incremental mobilities of ~32 cm² V-¹ s-¹, turn-on voltage of ~ −4 V and drain current on-to-off ratios of ~10⁷. Both direct current and radio frequency magnetron sputtering are explored showing similar characteristics.

DOI10.1116/1.2345206
Short TitleJ. Vac. Sci. Technol. B