OREGON STATE UNIVERSITY

You are here

Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

TitleTransparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing
Publication TypeJournal Article
Year of Publication2006
AuthorsHong, D., H. Q. Chiang, R. E. Presley, N. L. DeHuff, J. P. Bender, C-H. Park, J. F. Wager, and D. A. Keszler
JournalThin Solid Films
Volume515
Issue4
Pagination2717 - 2721
Date Published12/2006
ISSN00406090
Keywordsindium oxide, sequential layer deposition, tin oxide, zinc indium oxide, zinc oxide, zinc tin oxide (ZTO)
Abstract

A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n − 1)d¹⁰ns⁰ (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide.

DOI10.1016/j.tsf.2006.03.050
Short TitleThin Solid Films