OREGON STATE UNIVERSITY

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Transparent ring oscillator based on indium gallium oxide thin-film transistors

TitleTransparent ring oscillator based on indium gallium oxide thin-film transistors
Publication TypeJournal Article
Year of Publication2006
AuthorsPresley, R. E., D. Hong, H. Q. Chiang, C. M. Hung, R. L. Hoffman, and J. F. Wager
JournalSolid-State Electronics
Volume50
Issue3
Pagination500 - 503
Date Published03/2006
ISSN00381101
Keywordsindium gallium oxide, inverter, ring oscillator, thin-film transistors, transparent electronics
Abstract

Highly transparent ring oscillators, exhibiting ∼75% optical transmittance in the visible portion of the electromagnetic spectrum, are fabricated using indium gallium oxide as the active channel material and standard photolithography techniques. The n-channel indium gallium oxide transparent thin-film transistors (TTFTs) exhibit a peak incremental mobility of ∼7 cm² V-¹ s-¹ and turn-on voltage of ∼2 V. A five-stage ring oscillator circuit (which does not employ level-shifting) exhibits an oscillation frequency of ∼2.2 kHz when the gate and drain of the load transistor are biased at 30 V; the maximum oscillation frequency observed is ∼9.5 kHz, with the gate and drain of the load transistor biased at ∼80 V.

DOI10.1016/j.sse.2006.02.004
Short TitleSolid-State Electronics