OREGON STATE UNIVERSITY

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Growth, characterization and application of CdS thin films deposited by chemical bath deposition

TitleGrowth, characterization and application of CdS thin films deposited by chemical bath deposition
Publication TypeJournal Article
Year of Publication2005
AuthorsChang, Y. - J., C. L. Munsee, G. S. Herman, J. F. Wager, P. Mugdur, D. - H. Lee, and C-H. Chang
JournalSurface and Interface Analysis
Volume37
Issue4
Pagination398 - 405
Date Published04/2005
ISSN1096-9918
Keywordscadmium sulfide, chemical bath deposition, flexible electronics, thin-film transistors
Abstract

technologies for inorganic thin-film transistors (TFTs). In this paper, we report our recent progress in fabricating CdS TFTs using chemical bath deposition (CBD) to deposit CdS channel layers. Device analysis of an enhancement-mode CdS metal–insulator–semiconductor field effect transistor (MISFET) with a field-effect mobility of ∼1.5 cm² V-¹ s-¹ and a threshold voltage of VT ∼ 14 V is reported here. An on-to-off ratio of ∼10⁶ is achieved. This rather large drain current on-to-off ratio indicates that this device will function well as a switch. An examination of the CdS film morphology by scanning electron microscopy indicates that the films deposited by CBD and used for our current device fabrication are dominated by a particle sticking growth mechanism. This is supported by a real-time quartz crystal microbalance growth curve and atomic force microscopy characterizations of the particles formed in the CBD solution. A different bath condition for CBD was tested to obtain a dense CdS layer. A selected-area electron diffraction pattern indicates that the CdS thin film deposited by CBD has a hexagonal structure with an optical bandgap of 2.4 eV as determined by UV–Vis absorption.

DOI10.1002/sia.2012
Short TitleSurf. Interface Anal.