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Passivation of zinc–tin–oxide thin-film transistors

TitlePassivation of zinc–tin–oxide thin-film transistors
Publication TypeJournal Article
Year of Publication2005
AuthorsHong, D., and J. F. Wager
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume23
Issue6
PaginationL25
Date Published2005
ISSN0734211X
Keywordsannealing, antimony compounds, calcium compounds, dielectric materials, germanium compounds, passivation, silicon compounds, strontium compounds, thin film transistors, vacuum deposition, zinc compounds
Abstract

A methodology for the passivation of bottom-gate thin-film transistors (TFTs) utilizing zinc–tin–oxide as the channel layer and silicon dioxide as the passivation layer is presented. This methodology involves annealing of the TFT after channel layer deposition and an additional anneal after thermal evaporation of a SiO₂ passivation layer. Passivated zinc–tin–oxide TFTs possess electrical characteristics equivalent to those of unpassivated, air-exposed devices. In contrast, TFT electrical performance is dramatically degraded if a zinc–tin–oxide TFT is covered with a dielectric layer and does not undergo both types of anneal. In addition to silicon dioxide, successful passivation of zinc–tin–oxide TFTs is accomplished using thermally evaporated calcium fluoride, germanium oxide, strontium fluoride, or antimony oxide as passivation dielectrics.

DOI10.1116/1.2127954
Short TitleJ. Vac. Sci. Technol. B