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High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

TitleHigh mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Publication TypeJournal Article
Year of Publication2005
AuthorsChiang, H. Q., J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler
JournalApplied Physics Letters
Volume86
Issue1
Pagination013503
Date Published2005
ISSN00036951
Keywordsamorphous semiconductors, annealing, high electron mobility transistors, II-VI semiconductors, semiconductor-insulator boundaries, semimetallic thin films, sputter deposition, thin film transistors, tin compounds, transparency, wide band gap semiconductors, zinc compounds
Abstract

Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm² V-¹ s-¹ are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices with turn-on voltage of 0–15 and −5–5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 10⁷ is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n−1)d¹⁰ ns⁰ (n ≥ 4) electronic configurations.

DOI10.1063/1.1843286
Short TitleAppl. Phys. Lett.