OREGON STATE UNIVERSITY

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p-Type oxides for use in transparent diodes

Titlep-Type oxides for use in transparent diodes
Publication TypeJournal Article
Year of Publication2002
AuthorsTate, J., M. K. Jayaraj, A. D. Draeske, T. Ulbrich, A. W. Sleight, K. A. Vanaja, R. Ragarajan, J. F. Wager, and R. L. Hoffman
JournalThin Solid Films
Volume411
Issue1
Pagination119 - 124
Date Published05/2002
ISSN00406090
KeywordsDelafossite, oxygen intercalation, p-type, Seebeck effect, thin films, transparent conductors, transparent diode
Abstract

Several p-type oxides of the delafossite structure have been investigated in the hope that the conductivity and transparency will be high enough to render them useful in the manufacture of transparent p–n junction diodes and other transparent devices. The highest conductivity achieved to date has been 220 S/cm in CuCr₁₋ₓMgₓO₂ thin films. Oxygen intercalation in CuSc₁₋ₓMgₓO₂₊y films improves the conductivity at the expense of optical transparency. We have improved the conductivity of CuGaO₂-based films from 0.02 to 1 S/cm by substitution of Fe for Ga. p-Type conductivity has been demonstrated in an Ag-based delafossite film. A sputter-deposited AgCoO₂ film has a conductivity of 0.2 S/cm, a Seebeck coefficient of 230 μV/K and a band gap of 4.1 eV at room temperature. CuNi₂/₃Sb₁/₃O₂ films have been produced that are p-type conductors when doped with Sn.

DOI10.1016/S0040-6090(02)00199-2