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Electrical characterization of transparent p–i–n heterojunction diodes

TitleElectrical characterization of transparent p–i–n heterojunction diodes
Publication TypeJournal Article
Year of Publication2001
AuthorsHoffman, R. L., J. F. Wager, M. K. Jayaraj, and J. Tate
JournalJournal of Applied Physics
Volume90
Issue11
Pagination5763
Date Published12/2001
ISSN00218979
Keywordsdesign, junction diodes, modeling, other semiconductors, rectification, semiconductor-device characterization, semiconductors
Abstract

Transparent p–i–n heterojunction diodes are fabricated using heavily doped, p-type CuYO2 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range −4–4 V. The forward-bias current–voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 μm and an optical transmission of ∼35%–65% in the visible region.

DOI10.1063/1.1413710
Short TitleJ. Appl. Phys.