OREGON STATE UNIVERSITY

You are here

Offset of the electrical characteristics of alternating-current thin-film electroluminescent devices

TitleOffset of the electrical characteristics of alternating-current thin-film electroluminescent devices
Publication TypeJournal Article
Year of Publication1996
AuthorsShih, S., P. D. Keir, J. C. Hitt, and J. F. Wager
JournalApplied Physics Letters
Volume69
Issue13
Pagination1921
Date Published1996
ISSN00036951
KeywordsCV characteristic, doped materials, electroluminescence, interface states, manganese additions, phosphors, thin films, zinc sulfides
Abstract

Offset is observed in the charge–voltage (Q–V) or internal charge–phosphor field (Q–Fp) characteristics of certain alternating‐current thin‐film electroluminescent (ACTFEL) devices. This offset arises from a displacement along the voltage axis of a transient curve measured across a sense capacitor in the electrical characterization setup. A procedure for adjusting this offset is proposed that allows ACTFEL devices manifesting offset to be meaningfully analyzed. Two possible sources of offset are deduced from simulation and are associated with an asymmetry in the interface state energy depths at the two phosphor–insulator interfaces or with an asymmetry in the location of space charge generation in the phosphor.

DOI10.1063/1.117622
Short TitleAppl. Phys. Lett.