Hot-electron impact excitation of ZnS:Tb alternating-current thin-film electroluminescent devices

TitleHot-electron impact excitation of ZnS:Tb alternating-current thin-film electroluminescent devices
Publication TypeJournal Article
Year of Publication1995
AuthorsStreicher, K., T. K. Plant, and J. F. Wager
JournalJournal of Applied Physics
Volume78
Issue3
Pagination2101
Date Published1995
ISSN00218979
Keywordsdoped materials, electroluminescence, hot electrons, phosphors, quantum efficiency, sputtered materials, terbium additions, thin films, zinc selenides
Abstract

A new method of performing hot‐electron impact excitation experiments using alternating‐current thin‐film electroluminescent (ACTFEL) devices is reported. This method relies on the use of a field‐control circuit to control the magnitude of the phosphor field and consists of plotting the intensity of a given electroluminescence transition, normalized by the amount of conduction charge which flows while the field‐control circuit is asserted (the electroluminescence intensity of a given transition divided by the conduction charge is denoted the impact excitation quantum yield ηie), as a function of the phosphor field Fp. ηie vs Fp is measured for ZnS:Tb ACTFEL devices fabricated by atomic layer epitaxy (ALE) and by sputtering. ηie exhibits a threshold at approximately 0.5 MV/cm and saturation at approximately 1.5 MV/cm. The magnitude of ηie for the ALE ACTFEL device depends strongly on temperature; in contrast, ηie for the sputtered ACTFEL device is virtually temperature independent.

DOI10.1063/1.360188
Short TitleJ. Appl. Phys.