OREGON STATE UNIVERSITY

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Hot electron luminescence in ZnS alternating-current thin-film electroluminescent devices

TitleHot electron luminescence in ZnS alternating-current thin-film electroluminescent devices
Publication TypeJournal Article
Year of Publication1993
AuthorsDouglas, A. A., J. F. Wager, D. C. Morton, J. B. Koh, and C. P. Hogh
JournalApplied Physics Letters
Volume63
Issue2
Pagination231
Date Published07/1993
ISSN00036951
Keywordsalternating current, distribution functions, electroluminescence, energy spectra, hot electrons, msm junctions, recombination, transport processes, zinc sulfides
Abstract

Hot electron luminescence experiments are performed on ZnS alternating-current thin-film electroluminescent (ACTFEL) devices in order to determine the extent to which the electron distribution is heated. The luminescence spectrum is found to be broad and essentially featureless up to a high energy cutoff of approximately 3.7 eV, which is determined by optical absorption within the ZnS. This result indicates that under normal operating conditions in a ZnS ACTFEL device, a significant fraction of the electrons transported across the phosphor possess energies equal to or in excess of the ZnS band gap.

DOI10.1063/1.110350
Short TitleAppl. Phys. Lett.