OREGON STATE UNIVERSITY

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Native oxide formation and electrical instabilities at the insulator/InP interface

TitleNative oxide formation and electrical instabilities at the insulator/InP interface
Publication TypeJournal Article
Year of Publication1983
AuthorsWager, J. F., K. M. Geib, C. W. Wilmsen, and L. L. Kazmerski
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume1
Issue3
Pagination778
Date Published1983
ISSN0734211X
Keywordselectrical properties, energy gap, indium oxides, indium phosphides, instability, interfaces, oxidation, tunneling
Abstract

A variety of surface analytical techniques have been employed in an attempt to correlate the chemistry of InP native oxides with electrical interface instabilities observed in InP MIS devices. The native oxides examined were predominantly InPO₄ but upon closer examination had small amounts of In₂O₃ incorporated into the outer oxide surface. The band gap of InPO₄ was estimated to be about 4.5 eV, although several observations indicate that this may be only a lower limit. It is suggested that tunneling of electrons from InP through the InPO₄ into In₂O₃ may account for electrical interface instabilities observed in InP MIS devices.

DOI10.1116/1.582691
Short TitleJ. Vac. Sci. Technol. B