Oxidation of InP in a plasma-enhanced chemical vapor deposition reactor

TitleOxidation of InP in a plasma-enhanced chemical vapor deposition reactor
Publication TypeJournal Article
Year of Publication1982
AuthorsWager, J. F., W. H. Makky, C. W. Wilmsen, and L. G. Meiners
JournalThin Solid Films
Volume95
Issue4
Pagination343 - 350
Date Published09/1982
ISSN00406090
Abstract

During the plasma-enhanced chemical vapor deposition (PECVD) of SiO₂ onto InP, an oxide may grow. This oxide could affect the electrical properties of the SiO₂-InP interface. In this paper we report on the temperature dependence of the growth rate, composition and topography of oxides grown in a PECVD reactor which has a separate plasma chamber. The oxide growth rate in the main chamber was found to be a function of the transfer tube length and was greater than the thermal oxidation rate for T<350°C. The oxide composition was found to be primarily InPO₄ with some In₂O₃ in the thicker layers. The topography varied with processing.

DOI10.1016/0040-6090(82)90040-2
Short TitleThin Solid Films